FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4244728051> ?p ?o ?g. }

• W4244728051 endingPage "180" @default.
• W4244728051 startingPage "177" @default.
• W4244728051 abstract "Abstract The 11th International Conference on Nitride Semiconductors (ICNS‐11) was held at Beijing International Convention Center during August 30 to September 4, 2015. The ICNS conference series is a premier platform for presenting research results in group III‐nitride semiconductors. The 11th one was the latest following the first conference held in Nagoya, Japan (TWN'95); the second in Tokushima, Japan (ICNS‐2); the third in Montpellier, France (ICNS‐3); the fourth in Denver, USA (ICNS‐4); the fifth in Nara, Japan (ICNS‐5); the sixth in Bremen, Germany (ICNS‐6); the seventh in Las Vegas, USA (ICNS‐7); the eighth in Jeju, Korea (ICNS‐8); the ninth in Glasgow, UK (ICNS‐9); and the tenth in Washington D.C. USA (ICNS‐10). The conference was very well attended with 821 attendees from 33 countries and areas, who had enjoyed a nice summer week in Beijing. A total of 733 abstracts were submitted to the conference, making 191 oral and 484 poster presentations. The Nitride Semiconductor field continues to grow and diversify, and as a result, the conference series ran four parallel sessions. The conference was divided into 44 different symposia, covering the entire spectra of III‐nitride semiconductor research and applications. Combining with 3 ramp sessions, all the contributors to this conference shared the general trends appearing in nitride semiconductor community, including the steady advancements in growth of GaN and AlN bulk crystals, greater attentions towards electronic devices, a movement from lateral to vertical devices, much progress in UV devices, more concern about point defects, and atomic level analysis on homogeneity or segregation of InGaN alloys. The organizers are particularly grateful to Nobel Prize laureates Hiroshi Amano and Shuji Nakamura for their great support to this conference. We are also very grateful to all members of the conference committees and invited speakers. We would especially like to acknowledge the sponsors and agencies for their financial support. Thanks also to the 38 exhibitors who participated in the meeting. Finally, we especially want to express our great appreciation to Overseas Exchange Center of Peking University and Beijing International Conference Center. Altogether 109 submissions were received for the conference proceedings to be published in the journal of physica status solidi , based on their standard evaluation procedures. Among them, 76 articles have been accepted for publication in this special volume, with 28 being accepted for special sections in Phys. Status Solidi A and Phys. Status Solidi B. We are grateful to the editorial support provided by Stefan Hildebrandt, Julia Hübner, Irina Juschak and their team in bringing the proceedings together. Finally, we thank all those who attended and contributed to making ICNS‐11 such an enjoyable and successful conference and look forward to meeting you all again in Strasbourg at ICNS‐12 in 2017." @default.
• W4244728051 created "2022-05-12" @default.
• W4244728051 creator A5027900365 @default.
• W4244728051 creator A5050022015 @default.
• W4244728051 creator A5056540688 @default.
• W4244728051 creator A5059850766 @default.
• W4244728051 creator A5071009883 @default.
• W4244728051 creator A5085792374 @default.
• W4244728051 date "2016-05-01" @default.
• W4244728051 modified "2023-10-14" @default.
• W4244728051 title "Nitride Semiconductors" @default.
• W4244728051 doi "https://doi.org/10.1002/pssc.201670126" @default.
• W4244728051 hasPublicationYear "2016" @default.
• W4244728051 type Work @default.
• W4244728051 citedByCount "0" @default.
• W4244728051 crossrefType "journal-article" @default.
• W4244728051 hasAuthorship W4244728051A5027900365 @default.
• W4244728051 hasAuthorship W4244728051A5050022015 @default.
• W4244728051 hasAuthorship W4244728051A5056540688 @default.
• W4244728051 hasAuthorship W4244728051A5059850766 @default.
• W4244728051 hasAuthorship W4244728051A5071009883 @default.
• W4244728051 hasAuthorship W4244728051A5085792374 @default.
• W4244728051 hasBestOaLocation W42447280511 @default.
• W4244728051 hasConcept C121332964 @default.
• W4244728051 hasConcept C127413603 @default.
• W4244728051 hasConcept C161191863 @default.
• W4244728051 hasConcept C24890656 @default.
• W4244728051 hasConcept C2776244770 @default.
• W4244728051 hasConcept C41008148 @default.
• W4244728051 hasConcept C61696701 @default.
• W4244728051 hasConcept C71924100 @default.
• W4244728051 hasConcept C76155785 @default.
• W4244728051 hasConceptScore W4244728051C121332964 @default.
• W4244728051 hasConceptScore W4244728051C127413603 @default.
• W4244728051 hasConceptScore W4244728051C161191863 @default.
• W4244728051 hasConceptScore W4244728051C24890656 @default.
• W4244728051 hasConceptScore W4244728051C2776244770 @default.
• W4244728051 hasConceptScore W4244728051C41008148 @default.
• W4244728051 hasConceptScore W4244728051C61696701 @default.
• W4244728051 hasConceptScore W4244728051C71924100 @default.
• W4244728051 hasConceptScore W4244728051C76155785 @default.
• W4244728051 hasIssue "5-6" @default.
• W4244728051 hasLocation W42447280511 @default.
• W4244728051 hasOpenAccess W4244728051 @default.
• W4244728051 hasPrimaryLocation W42447280511 @default.
• W4244728051 hasRelatedWork W1986433491 @default.
• W4244728051 hasRelatedWork W2099903416 @default.
• W4244728051 hasRelatedWork W2326897987 @default.
• W4244728051 hasRelatedWork W2899084033 @default.
• W4244728051 hasRelatedWork W4234641179 @default.
• W4244728051 hasRelatedWork W4235237420 @default.
• W4244728051 hasRelatedWork W4242647539 @default.
• W4244728051 hasRelatedWork W570440468 @default.
• W4244728051 hasRelatedWork W578308950 @default.
• W4244728051 hasRelatedWork W2082999170 @default.
• W4244728051 hasVolume "13" @default.
• W4244728051 isParatext "false" @default.
• W4244728051 isRetracted "false" @default.
• W4244728051 workType "article" @default.