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- W4245221279 abstract "As a tool to support the fabrication process design of micromachine devices with complicated three-dimensional (3D) configurations, a crystal orientation-dependent aniso-tropic etching analysis system called MICROCAD has been developed. This system has the capability to analyze the time variations of the 3D etching profile for an arbitrary mask pattern, by preparing the etching rate of the single-crystal silicon to be processed in all directions as a database. The measurement method of the etching rate in all directions, the configuration of the analysis system, and the computational method for the 3D etching profile are described. As examples of the applications of this system, a design of a compensation mask pattern, an analysis of the etching shape while still in progress after etching through of the wafer, and the process design of a multistage etching process are presented so that the effectiveness of this system for the process design is discussed. © 2000 Scripta Technica, Electron Comm Jpn Pt 2, 83(4): 13–22, 2000" @default.
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- W4245221279 date "2000-04-01" @default.
- W4245221279 modified "2023-09-27" @default.
- W4245221279 title "Development of an orientation-dependent anisotropic etching simulation system MICROCAD" @default.
- W4245221279 doi "https://doi.org/10.1002/(sici)1520-6432(200004)83:4<13::aid-ecjb2>3.3.co;2-c" @default.
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