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• W4245223341 endingPage "04DC14" @default.
• W4245223341 startingPage "04DC14" @default.
• W4245223341 abstract "We have comparatively investigated the electrical characteristics including threshold voltage (Vth) variability and mobility by fabricating n+-polycrystalline silicon (poly-Si) gate and physical-vapor-deposited (PVD) titanium nitride (TiN) gate fin-type double-gate metal–oxide–semiconductor field-effect transistors (FinFETs), and demonstrated 20-nm-thick PVD-TiN gate FinFETs with a symmetrical Vth. It is experimentally found that the gate stack of a 20-nm-thick PVD-TiN layer capped with a 100-nm-thick n+-poly-Si layer is very effective for setting a symmetrical Vth for undoped FinFETs keeping almost the same Vth variability and mobility as those in the case of the n+-poly-Si gate only. On the other hand, mobility degradation was observed in the case of pure 50-nm-thick PVD-TiN gates. These results indicate that mobility degradation probably caused by the thick metal gate induced mechanical stress can be effectively suppressed by reducing the PVD-TiN thickness to 20 nm or less." @default.
• W4245223341 created "2022-05-12" @default.
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• W4245223341 date "2011-04-01" @default.
• W4245223341 modified "2023-09-25" @default.
• W4245223341 title "Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n⁺-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors" @default.
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• W4245223341 doi "https://doi.org/10.7567/jjap.50.04dc14" @default.
• W4245223341 hasPublicationYear "2011" @default.
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