Matches in SemOpenAlex for { <https://semopenalex.org/work/W4245474645> ?p ?o ?g. }
Showing items 1 to 73 of
73
with 100 items per page.
- W4245474645 endingPage "564" @default.
- W4245474645 startingPage "564" @default.
- W4245474645 abstract "Abstract The kind of profile produced during the reactive ion etching of AlGaInN light-emitting-diode (LED) heterostructures on the surface that became free after removal of the growth substrate is studied in relation to the composition of the gas mixture used in the etching process. It is shown that using a mixture composed of Cl_2 and Ar, taken in a 3:2 ratio in terms of flow rates, leads to the thinnest profile, whereas a 2 : 1 gas mixture of BCl_3 and Ar provides the largest structural elements. To study the effect of the kind of profile on the quantum efficiency (QE), flip-chip LEDs are fabricated on a silicon substrate. The LEDs are etched in different modes after the growth substrate is removed. Etching in the Cl_2:BCl_3:Ar mixture with a flow ratio of 6:10:11, which leads to intermediate sizes of the etching profile elements, is optimal for obtaining maximum light extraction from a LED chip at a wavelength of 460 nm. The variation of the kind of profile with the gas-mixture composition suggests that the profile parameters can be tuned to the wavelength used. An analysis of how the QE of LED chips depends on the etching duration in the three-component mixture under consideration results in that the optimum etching duration is estimated to be ~30 min. The results of the study can also be of use in the search for conditions minimizing the reflection of incident light by a chip, e.g., for photodetectors." @default.
- W4245474645 created "2022-05-12" @default.
- W4245474645 creator A5020305448 @default.
- W4245474645 creator A5029745445 @default.
- W4245474645 creator A5073321467 @default.
- W4245474645 creator A5083358705 @default.
- W4245474645 date "2020-01-01" @default.
- W4245474645 modified "2023-09-25" @default.
- W4245474645 title "Модификация рельефа n-поверхности AlGaInN-светодиодов изменением состава газовой смеси при реактивном ионном травлении" @default.
- W4245474645 doi "https://doi.org/10.21883/ftp.2020.06.49386.9353" @default.
- W4245474645 hasPublicationYear "2020" @default.
- W4245474645 type Work @default.
- W4245474645 citedByCount "0" @default.
- W4245474645 crossrefType "journal-article" @default.
- W4245474645 hasAuthorship W4245474645A5020305448 @default.
- W4245474645 hasAuthorship W4245474645A5029745445 @default.
- W4245474645 hasAuthorship W4245474645A5073321467 @default.
- W4245474645 hasAuthorship W4245474645A5083358705 @default.
- W4245474645 hasBestOaLocation W42454746451 @default.
- W4245474645 hasConcept C100460472 @default.
- W4245474645 hasConcept C111368507 @default.
- W4245474645 hasConcept C113196181 @default.
- W4245474645 hasConcept C127313418 @default.
- W4245474645 hasConcept C130472188 @default.
- W4245474645 hasConcept C171250308 @default.
- W4245474645 hasConcept C176666156 @default.
- W4245474645 hasConcept C185592680 @default.
- W4245474645 hasConcept C192562407 @default.
- W4245474645 hasConcept C205507967 @default.
- W4245474645 hasConcept C2777289219 @default.
- W4245474645 hasConcept C2779227376 @default.
- W4245474645 hasConcept C43617362 @default.
- W4245474645 hasConcept C49040817 @default.
- W4245474645 hasConcept C544956773 @default.
- W4245474645 hasConcept C6260449 @default.
- W4245474645 hasConcept C78434282 @default.
- W4245474645 hasConceptScore W4245474645C100460472 @default.
- W4245474645 hasConceptScore W4245474645C111368507 @default.
- W4245474645 hasConceptScore W4245474645C113196181 @default.
- W4245474645 hasConceptScore W4245474645C127313418 @default.
- W4245474645 hasConceptScore W4245474645C130472188 @default.
- W4245474645 hasConceptScore W4245474645C171250308 @default.
- W4245474645 hasConceptScore W4245474645C176666156 @default.
- W4245474645 hasConceptScore W4245474645C185592680 @default.
- W4245474645 hasConceptScore W4245474645C192562407 @default.
- W4245474645 hasConceptScore W4245474645C205507967 @default.
- W4245474645 hasConceptScore W4245474645C2777289219 @default.
- W4245474645 hasConceptScore W4245474645C2779227376 @default.
- W4245474645 hasConceptScore W4245474645C43617362 @default.
- W4245474645 hasConceptScore W4245474645C49040817 @default.
- W4245474645 hasConceptScore W4245474645C544956773 @default.
- W4245474645 hasConceptScore W4245474645C6260449 @default.
- W4245474645 hasConceptScore W4245474645C78434282 @default.
- W4245474645 hasIssue "6" @default.
- W4245474645 hasLocation W42454746451 @default.
- W4245474645 hasOpenAccess W4245474645 @default.
- W4245474645 hasPrimaryLocation W42454746451 @default.
- W4245474645 hasRelatedWork W10848326 @default.
- W4245474645 hasRelatedWork W13173232 @default.
- W4245474645 hasRelatedWork W1332446 @default.
- W4245474645 hasRelatedWork W14141964 @default.
- W4245474645 hasRelatedWork W17471947 @default.
- W4245474645 hasRelatedWork W19130431 @default.
- W4245474645 hasRelatedWork W21815590 @default.
- W4245474645 hasRelatedWork W2645894 @default.
- W4245474645 hasRelatedWork W9844591 @default.
- W4245474645 hasRelatedWork W17974577 @default.
- W4245474645 hasVolume "54" @default.
- W4245474645 isParatext "false" @default.
- W4245474645 isRetracted "false" @default.
- W4245474645 workType "article" @default.