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• W4246306323 startingPage "071503" @default.
• W4246306323 abstract "Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition." @default.
• W4246306323 created "2022-05-12" @default.
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• W4246306323 date "2011-07-01" @default.
• W4246306323 modified "2023-09-30" @default.
• W4246306323 title "Estimation of Interfacial Fixed Charge at Al₂O₃/SiO₂Using Slant-Etched Wafer for Solar Cell Application" @default.
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• W4246306323 doi "https://doi.org/10.7567/jjap.50.071503" @default.
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