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- W4247502444 abstract "We present a bidirectional two-terminal switching device using a Schottky barrier for spin-transfer-torque magnetic random access memory (STT-MRAM), which is composed of a Schottky barrier contact with a metal/semiconductor/metal (M/S/M) structure. The proposed M/S/M switching device provides a bidirectional current flow sufficient to write STT-MRAM using a punch through with an extended depletion region at a junction under a reverse bias of M/S or S/M. In addition, a high on–off ratio of 105 is confirmed under the read condition, which is acceptable for the operation of STT-MRAM. From this work, it is expected that an M/S/M structure with bilateral Schottky junctions will be a promising switch device for STT MRAM beyond 20 nm." @default.
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- W4247502444 date "2012-10-01" @default.
- W4247502444 modified "2023-09-28" @default.
- W4247502444 title "Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory" @default.
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- W4247502444 doi "https://doi.org/10.7567/jjap.51.106501" @default.
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