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- W4247922008 abstract "We propose a novel device concept for infrared detectors which utilizes a thin film of a narrow gap semiconductor deposited on a p‐Si substrate. Such a device would retain the advantages of using a Si‐based technology, while operating with higher quantum efficiency. The operation of the device would be similar to a Schottky barrier detector, in that carriers would be excited from the overlayer into the substrate. However, the absence of undesired states near the Fermi level should lead to more efficient generation and transport of photoexcited carriers. Calculations using a recently developed diffusion model for the behavior of Schottky barrier detectors indicate the potential for an order of magnitude improvement in quantum efficiency over PtSi/p‐Si detectors at a wavelength of 4 μm." @default.
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- W4247922008 date "1991-01-01" @default.
- W4247922008 modified "2023-09-26" @default.
- W4247922008 title "Novel device concept for silicon based infrared detectors" @default.
- W4247922008 doi "https://doi.org/10.1063/1.41050" @default.
- W4247922008 hasPublicationYear "1991" @default.
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