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- W4247947784 abstract "In a recent publication we gave preliminary results on the lasing characteristics of a GRIN-SCH GaAs/GaAlAs laser grown by OM-VPE. The parameters of this single quantum well laser have now been further optimised, and for a quantum well thickness of 60 Å, with outer confinement layers composed of Ga0.4Al0.6As, significantly lower threshold current densities have been achieved. For a broad-area laser of cavity length 413 μm (width 140 μm) the average threshold current density is 232 A cm−2, and this decreases to 121 A cm−2 for a chip length of 1788 μm. We believe that these are the lowest lasing threshold current densities that have yet been reported." @default.
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- W4247947784 date "1982-01-01" @default.
- W4247947784 modified "2023-09-23" @default.
- W4247947784 title "Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE" @default.
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- W4247947784 doi "https://doi.org/10.1049/el:19820590" @default.
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