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• W4248676278 abstract "Cu2ZnSnS4 (CZTS) thin films were fabricated using a rapid thermal process in 5% H2S+ N2 atmosphere from precursors prepared by the sol–gel method. The precursors were preheated at 250 °C for 10 min and then sulfurized at different temperatures from 300 to 600 °C for 10 min. XRD studies showed that the samples sulfurized at 500–600 °C had a CZTS structure. With increasing sulfurization temperature, the chemical composition ratio of sulfur/metal and the grains size of CZTS increased. From the (αh ν)2–hν plot, the CZTS films had a band gap of ∼1.5 eV." @default.
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• W4248676278 date "2011-01-01" @default.
• W4248676278 modified "2023-10-18" @default.
• W4248676278 title "Dependence on Annealing Temperature of Properties of Cu₂ZnSnS₄Thin Films Prepared by Sol–Gel Sulfurization Method" @default.
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• W4248676278 doi "https://doi.org/10.7567/jjap.50.01be10" @default.
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