Matches in SemOpenAlex for { <https://semopenalex.org/work/W4248995391> ?p ?o ?g. }
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- W4248995391 endingPage "04DA11" @default.
- W4248995391 startingPage "04DA11" @default.
- W4248995391 abstract "We have fabricated Ge-based p-channel metal–insulator–semiconductor field effect transistor (p-MISFET) devices using a hafnium oxide (HfO2) gate film prepared by photoassisted metal organic chemical vapor deposition (MOCVD). To reduce the interface state of a HfO2/Ge gate stack, we performed a new F2 treatment method on a Ge surface. Before the deposition of HfO2 insulation thin films on n-type Ge(100), Ge surfaces were treated in fluorine (F2) gas ambient under various conditions. Experimental results show that F is densely distributed at the interface of the HfO2/Ge gate stack with the F2 treatment of the HfO2 bottom layers. Poorly passivated dangling bonds and oxygen vacancies (Vo) near the interface between HfO2 and Ge were stabilized by chemically active F. Consequently, the interface state density (Dit) of the HfO2/Ge gate stack was reduced and the electrical characteristics of the HfO2/Ge p-MISFETs were improved. Therefore, the new F2 treatment method is very useful for fabricating a good HfO2/Ge p-MISFET device." @default.
- W4248995391 created "2022-05-12" @default.
- W4248995391 creator A5019669992 @default.
- W4248995391 creator A5069592976 @default.
- W4248995391 creator A5069801452 @default.
- W4248995391 creator A5078505413 @default.
- W4248995391 date "2011-04-01" @default.
- W4248995391 modified "2023-09-26" @default.
- W4248995391 title "Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment" @default.
- W4248995391 cites W1646998796 @default.
- W4248995391 cites W1967882815 @default.
- W4248995391 cites W1978574901 @default.
- W4248995391 cites W1991799175 @default.
- W4248995391 cites W1998142289 @default.
- W4248995391 cites W1998628204 @default.
- W4248995391 cites W2015229505 @default.
- W4248995391 cites W2020286761 @default.
- W4248995391 cites W2023246110 @default.
- W4248995391 cites W2064520600 @default.
- W4248995391 cites W2071077006 @default.
- W4248995391 cites W2073363339 @default.
- W4248995391 cites W2074137994 @default.
- W4248995391 cites W2075050869 @default.
- W4248995391 cites W2093743219 @default.
- W4248995391 cites W2145633302 @default.
- W4248995391 cites W4214518966 @default.
- W4248995391 doi "https://doi.org/10.7567/jjap.50.04da11" @default.
- W4248995391 hasPublicationYear "2011" @default.
- W4248995391 type Work @default.
- W4248995391 citedByCount "0" @default.
- W4248995391 crossrefType "journal-article" @default.
- W4248995391 hasAuthorship W4248995391A5019669992 @default.
- W4248995391 hasAuthorship W4248995391A5069592976 @default.
- W4248995391 hasAuthorship W4248995391A5069801452 @default.
- W4248995391 hasAuthorship W4248995391A5078505413 @default.
- W4248995391 hasConcept C110738630 @default.
- W4248995391 hasConcept C113196181 @default.
- W4248995391 hasConcept C119599485 @default.
- W4248995391 hasConcept C127413603 @default.
- W4248995391 hasConcept C133386390 @default.
- W4248995391 hasConcept C145598152 @default.
- W4248995391 hasConcept C16317505 @default.
- W4248995391 hasConcept C165801399 @default.
- W4248995391 hasConcept C171250308 @default.
- W4248995391 hasConcept C172385210 @default.
- W4248995391 hasConcept C175665537 @default.
- W4248995391 hasConcept C178790620 @default.
- W4248995391 hasConcept C185592680 @default.
- W4248995391 hasConcept C192562407 @default.
- W4248995391 hasConcept C2778673556 @default.
- W4248995391 hasConcept C2779227376 @default.
- W4248995391 hasConcept C32424582 @default.
- W4248995391 hasConcept C49040817 @default.
- W4248995391 hasConcept C544956773 @default.
- W4248995391 hasConcept C57410435 @default.
- W4248995391 hasConceptScore W4248995391C110738630 @default.
- W4248995391 hasConceptScore W4248995391C113196181 @default.
- W4248995391 hasConceptScore W4248995391C119599485 @default.
- W4248995391 hasConceptScore W4248995391C127413603 @default.
- W4248995391 hasConceptScore W4248995391C133386390 @default.
- W4248995391 hasConceptScore W4248995391C145598152 @default.
- W4248995391 hasConceptScore W4248995391C16317505 @default.
- W4248995391 hasConceptScore W4248995391C165801399 @default.
- W4248995391 hasConceptScore W4248995391C171250308 @default.
- W4248995391 hasConceptScore W4248995391C172385210 @default.
- W4248995391 hasConceptScore W4248995391C175665537 @default.
- W4248995391 hasConceptScore W4248995391C178790620 @default.
- W4248995391 hasConceptScore W4248995391C185592680 @default.
- W4248995391 hasConceptScore W4248995391C192562407 @default.
- W4248995391 hasConceptScore W4248995391C2778673556 @default.
- W4248995391 hasConceptScore W4248995391C2779227376 @default.
- W4248995391 hasConceptScore W4248995391C32424582 @default.
- W4248995391 hasConceptScore W4248995391C49040817 @default.
- W4248995391 hasConceptScore W4248995391C544956773 @default.
- W4248995391 hasConceptScore W4248995391C57410435 @default.
- W4248995391 hasIssue "4S" @default.
- W4248995391 hasLocation W42489953911 @default.
- W4248995391 hasOpenAccess W4248995391 @default.
- W4248995391 hasPrimaryLocation W42489953911 @default.
- W4248995391 hasRelatedWork W1623333855 @default.
- W4248995391 hasRelatedWork W1985332188 @default.
- W4248995391 hasRelatedWork W2023805049 @default.
- W4248995391 hasRelatedWork W2025822006 @default.
- W4248995391 hasRelatedWork W2026270272 @default.
- W4248995391 hasRelatedWork W2047683715 @default.
- W4248995391 hasRelatedWork W2061897979 @default.
- W4248995391 hasRelatedWork W2076248389 @default.
- W4248995391 hasRelatedWork W4324328993 @default.
- W4248995391 hasRelatedWork W1968477531 @default.
- W4248995391 hasVolume "50" @default.
- W4248995391 isParatext "false" @default.
- W4248995391 isRetracted "false" @default.
- W4248995391 workType "article" @default.