Matches in SemOpenAlex for { <https://semopenalex.org/work/W4249243552> ?p ?o ?g. }
Showing items 1 to 60 of
60
with 100 items per page.
- W4249243552 abstract "High quality hydrogenated amorphous silicon (a-Si:H), germanium (a-Ge:H) and silicon–germanium (a-SiGe:H) thin films have been deposited by means of a d.c. hollow cathode system with magnetic field confinement. High purity single-crystal silicon and germanium nozzles were reactively sputtered in a high-density hollow cathode discharge of argon and hydrogen. This process avoids the use of the toxic and pyrophoric gases, germane and silane. The amorphous silicon thin films had light to dark conductivity ratios >106 with light conductivity in the 10−5 S/cm range. The best a-Si:H films have a Tauc band gap near 1.8 eV with an atomic hydrogen concentration of approximately 14%. The growth rate was in the 2–3 μm/h range. For the a-Ge:H films the FTIR results indicate that these films have hydrogen bonding as a single atom, as did the hydrogenated silicon films. The Tauc bandgap was approximately 1.0 eV for all the germanium films. A slight photoresponse was noted for these films, which were deposited at a rate of from 2 to 6 μm/h. For the a-SiGe:H films, two hollow cathodes of single crystal Si and Ge are reactively sputtered simultaneously. A description of the complete system will be presented. The optical and electronic properties of the initial films are promising. The photoresponse is dependent upon the bandgap, i.e. the germanium content, as expected. A light to dark ratio of 2600 has been achieved for a film with a bandgap of 1.53 eV. The FTIR data indicates that SiH bonds dominate over Ge:H bonds by the absence of peaks at 570 and 1880 cm−1." @default.
- W4249243552 created "2022-05-12" @default.
- W4249243552 creator A5007871029 @default.
- W4249243552 date "2003-09-28" @default.
- W4249243552 modified "2023-09-25" @default.
- W4249243552 title "Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system" @default.
- W4249243552 doi "https://doi.org/10.1016/s0257-8972(03)00894-6" @default.
- W4249243552 hasPublicationYear "2003" @default.
- W4249243552 type Work @default.
- W4249243552 citedByCount "0" @default.
- W4249243552 crossrefType "journal-article" @default.
- W4249243552 hasAuthorship W4249243552A5007871029 @default.
- W4249243552 hasConcept C113196181 @default.
- W4249243552 hasConcept C171250308 @default.
- W4249243552 hasConcept C181966813 @default.
- W4249243552 hasConcept C185592680 @default.
- W4249243552 hasConcept C19067145 @default.
- W4249243552 hasConcept C192562407 @default.
- W4249243552 hasConcept C22423302 @default.
- W4249243552 hasConcept C2776154250 @default.
- W4249243552 hasConcept C2776390347 @default.
- W4249243552 hasConcept C2779667780 @default.
- W4249243552 hasConcept C43617362 @default.
- W4249243552 hasConcept C49040817 @default.
- W4249243552 hasConcept C544956773 @default.
- W4249243552 hasConcept C550623735 @default.
- W4249243552 hasConcept C56052488 @default.
- W4249243552 hasConcept C8010536 @default.
- W4249243552 hasConceptScore W4249243552C113196181 @default.
- W4249243552 hasConceptScore W4249243552C171250308 @default.
- W4249243552 hasConceptScore W4249243552C181966813 @default.
- W4249243552 hasConceptScore W4249243552C185592680 @default.
- W4249243552 hasConceptScore W4249243552C19067145 @default.
- W4249243552 hasConceptScore W4249243552C192562407 @default.
- W4249243552 hasConceptScore W4249243552C22423302 @default.
- W4249243552 hasConceptScore W4249243552C2776154250 @default.
- W4249243552 hasConceptScore W4249243552C2776390347 @default.
- W4249243552 hasConceptScore W4249243552C2779667780 @default.
- W4249243552 hasConceptScore W4249243552C43617362 @default.
- W4249243552 hasConceptScore W4249243552C49040817 @default.
- W4249243552 hasConceptScore W4249243552C544956773 @default.
- W4249243552 hasConceptScore W4249243552C550623735 @default.
- W4249243552 hasConceptScore W4249243552C56052488 @default.
- W4249243552 hasConceptScore W4249243552C8010536 @default.
- W4249243552 hasLocation W42492435521 @default.
- W4249243552 hasOpenAccess W4249243552 @default.
- W4249243552 hasPrimaryLocation W42492435521 @default.
- W4249243552 hasRelatedWork W1752199212 @default.
- W4249243552 hasRelatedWork W1976117477 @default.
- W4249243552 hasRelatedWork W2013783467 @default.
- W4249243552 hasRelatedWork W2083321254 @default.
- W4249243552 hasRelatedWork W2095015337 @default.
- W4249243552 hasRelatedWork W2129859591 @default.
- W4249243552 hasRelatedWork W2361873638 @default.
- W4249243552 hasRelatedWork W2774625754 @default.
- W4249243552 hasRelatedWork W2998387481 @default.
- W4249243552 hasRelatedWork W385990669 @default.
- W4249243552 isParatext "false" @default.
- W4249243552 isRetracted "false" @default.
- W4249243552 workType "article" @default.