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• W4249698710 abstract "Hiroshi Ito from Kitasato University in Japan, talks to Electronics Letters about the paper ‘Low-noise heterodyne detection of terahertz-waves at room temperature using zero-biased Fermi-level managed barrier diode’, page 1080. Hiroshi Ito My field of research is semiconductor devices and their applications to THz-wave technologies. I have been involved in research and development of ultrafast electron and photonics devices based on compound semiconductors, and eventually started applying these devices to THz-wave technologies in the late 90s. The THz range had been considered an “undeveloped frequency range” for a long time. This is because technologies for the generation and detection of such high frequency signals had been nearly absent. The THz-wave has several unique features, such as having spectroscopic fingerprints for several chemicals and molecules and the ability to pass through various materials. These features are suitable for security inspections through imaging and non-destructive spectroscopy for material characterisation. A widely-used THz-wave detector is the Schottky barrier diode (SBD). It works at room temperature and at very high frequencies. We developed SBDs and identified some issues requiring improvement. One such issue is its relatively large barrier height which results in large intrinsic differential resistance of the diode and thus increases noise voltages. Another concern was the stability and reproducibility of certain characteristics because SBD uses a less-controllable metal-semiconductor interface. The uniform characteristics are especially important when constructing an arrayed detector. In addition to this, SBDs usually require a relatively large local oscillator (LO) signal power for mixing detection. This limits the application of SBDs to a large mixing detector array especially at very high frequencies. We developed a novel THz-wave detector, Fermi-level managed barrier (FMB) diode. It consists of a semiconductor heterostructure with an unusually low barrier height. The low barrier height enables both low noise characteristics and large output current under zero-bias conditions. In the Letter, we applied the FMB diode to the heterodyne detection of THz-waves for the first time and revealed that a very low noise equivalent power (NEP) could be attained with a very low LO power under zero-bias conditions at room temperature. The intermediate frequency range was as wide as 11 GHz. The NEP obtained in this work draws close to the best reported results for SBDs at room temperature. So, the FMB diode is expected to improve the dynamic ranges of various systems considerably. Here, the important point is that the required LO power was two to three orders of magnitude lower than those required for SBDs. The low LO power means that even a single signal source can supply LO signals to a FMB diode array in the mixing detection mode. This feature makes it possible to construct highly sensitive detector arrays suitable for passive THz-wave imaging. A semiconductor heterostructure with a very low barrier height is not a special structure. However, to our knowledge, no one has tried to use it as a THz-wave detector and our challenge was to test if it could be applied in this way. In the short term, this work will produce collaborations with other institutes for applying the FMB diode to several cutting-edge systems to confirm its features. In the long term, I hope that the FMB diode will become a competing product against SBDs, especially at very high frequencies. The uniform characteristics of the FMB diode are best suited for an arrayed detector. We already fabricated and tested a linear detector array consisting of 100 FMB diodes. It demonstrated THz-wave imaging for a 120 x 120 mm2 area within 0.5 seconds. Based on this promising result, we continue to fabricate more practical and user-friendly detector arrays consisting of FMB diodes. In addition, we are going to transfer the FMB diode technology to our partner company to commercialise it. There have been extensive efforts to utilise THz-waves for more than twenty years. Up until now, many devices have been developed, and various applications have been proposed and tested. Thus, we are becoming aware of technologies that are practical, realistic, and provide unique new advantages over existing technologies. I propose this “selection and concentration” will continue to go on, and more practical developments as well as social implementations of THz-wave technologies will greatly progress within the next ten years." @default.
• W4249698710 created "2022-05-12" @default.
• W4249698710 date "2018-09-01" @default.
• W4249698710 modified "2023-10-17" @default.
• W4249698710 title "interview" @default.
• W4249698710 doi "https://doi.org/10.1049/el.2018.6608" @default.
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