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- W4251166170 abstract "Since the early proposal that InGaAs/InGaAs strained-layer superlattices (SLSs) should constitute a new class of optoelectronic materials, very little work has been done to master the growth conditions and optimize the resulting superlattice properties. In this work, we present the results of a preliminary investigation of SLSs grown by low-pressure metal–organic vapour phase epitaxy. Two different series of samples were grown to check independently the effect of well thickness and barrier composition. In both cases, in order to conserve one layer nominally lattice-matched to InP, the wells had a standard composition In0.53Ga0.47As." @default.
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- W4251166170 date "1993-01-01" @default.
- W4251166170 modified "2023-09-25" @default.
- W4251166170 title "Growth and characterization of In0.53Ga0.47As/InxGa1–xAs strained-layer superlattices" @default.
- W4251166170 doi "https://doi.org/10.1016/b978-0-444-81769-3.50033-4" @default.
- W4251166170 hasPublicationYear "1993" @default.
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