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• W4253801256 abstract "The fabrication of a Ni/Al2O3/Ni heteroepitaxial junction was achieved by the post-hydrogen reduction of a NiO/Al2O3/NiO trilayered epitaxial thin film grown by pulsed laser deposition. The top and bottom NiO layers were selectively reduced to Ni metal layers showing epitaxial relationships, while the Al2O3 interlayer remained. The crystallographic and interfacial characteristics were confirmed by X-ray diffraction analysis, reflection high-energy electron diffraction, and transmission electron microscopy. The fabricated Ni/Al2O3/Ni heteroepitaxial junction exhibited atomically sharp interfaces with no amorphous boundary layer." @default.
• W4253801256 created "2022-05-12" @default.
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• W4253801256 date "2011-09-01" @default.
• W4253801256 modified "2023-10-15" @default.
• W4253801256 title "Fabrication of Ni/Al2O3/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/Al2O3/NiO Trilayered Epitaxial Thin Film" @default.
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• W4253801256 doi "https://doi.org/10.7567/jjap.50.098004" @default.
• W4253801256 hasPublicationYear "2011" @default.
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