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• W4254167923 endingPage "341" @default.
• W4254167923 startingPage "315" @default.
• W4254167923 abstract "The adsorption of oxygen on clean GaAs(110) surfaces cleaved in situ was studied by using Auger electron and electron energy loss spectroscopy. The surfaces were exposed to unexcited molecular oxygen in the dark and under simultaneous illumination with light from a xenon arc lamp. The oxygen uptake was quantitatively determined from the AES signals by using a layer model. Without illumination the oxygen uptake tends to saturate below 0.5 and below a full monolayer with the samples held at 120 and 300 K, respectively, while simultaneous exposure to light with a photon energy above the band-gap energy of GaAs and to oxygen molecules results in uptakes well beyond a monolayer (θ = 1 ML). The photon stimulation of the oxygen adsorption is due to the photocreated electron-hole pairs, and the uptake is to be characterized by the “combined” exposureptn (oxygen pressure p, exposure time t, electron-hole pair density n). Four different chemisorption states of oxygen were detected. State S is related to cleavage-introduced defects. At 300 K and in the dark, it saturates at pt ≃ 105 L, which results in θ ≃ 0.1 ML. It is followed by the main adsorption states T1 and T2. State T1 is an intermediate one at RT but the only one observed at 120 K in the dark. At 300 K and for exposures above 3 × 106 L without illumination, it converts to state T2, which has been studied in the past only. Above an uptake equivalent to one monolayer which can only be obtained during simultaneous exposures to oxygen molecules and photons a further phase was found. Therefore, it is concluded that the initial monolayer of oxygen is chemisorbed at the top GaAs layer while additional uptake of oxygen then results in the formation of an oxide layer." @default.
• W4254167923 created "2022-05-12" @default.
• W4254167923 creator A5038776526 @default.
• W4254167923 creator A5067128195 @default.
• W4254167923 date "1984-08-01" @default.
• W4254167923 modified "2023-09-30" @default.
• W4254167923 title "Chemisorption of oxygen at cleaved GaAs(110) surfaces: Photon stimulation and chemisorption states" @default.
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• W4254167923 doi "https://doi.org/10.1016/0039-6028(84)90545-4" @default.
• W4254167923 hasPublicationYear "1984" @default.
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