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• W4254795227 endingPage "05FH03" @default.
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• W4254795227 abstract "Abstract Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 10 16 cm −3 (lightly doped) to 3.8 × 10 19 cm −3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of the p-GaN was 4 × 10 6 cm −2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 160 to 450 K. A low compensation ratio of less than 1% was revealed. We also obtained the depth of the Mg acceptor level of 235 meV considering the lowering effect by the Coulomb potential of ionized acceptors. The hole mobilities of 33 cm 2 V −1 s −1 at 300 K and 72 cm 2 V −1 s −1 at 200 K were observed in lightly doped p-GaN." @default.
• W4254795227 created "2022-05-12" @default.
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• W4254795227 date "2016-04-11" @default.
• W4254795227 modified "2023-10-18" @default.
• W4254795227 title "Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations" @default.
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• W4254795227 doi "https://doi.org/10.7567/jjap.55.05fh03" @default.
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