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• W4255014730 endingPage "613" @default.
• W4255014730 startingPage "612" @default.
• W4255014730 abstract "The phase of an electron wave transmitted through a sample can be measured with the transmission electron microscope (TEM) using electron holography. This phase information is used to determine electrostatic potential distributions within the specimen, e.g. a semiconductor device [1]. Increasing the resolution towards anatomic scale makes it further possible to measure the lattice constants and the strain state of the crystalline specimen. In this contribution we present a simulation study on the obtainable phase information using the crystal structure, the macroscopic electrostatic potential, and the strain‐state as input parameters. This input is used to compute the potential distribution within the specimen. Then, we use the multislice‐algorithm to propagate the electron wave through the sample. The output of the simulation, i.e. the actual amplitude and phase of the exit‐wave, is analyzed by Fourier filtering of selected reflections. Figure 1 illustrates this approach. We apply this approach to simulate the measurement of the polarization induced electrostatic fields in a strained Al 0.2 Ga 0.8 N thin‐layer, embedded in a GaN matrix. Figure 2a shows the scheme of the specific simulation setup described in this contribution. This material system is of particular interest, because of its applications to optoelectronics. The actual field‐strengths in this material system are still a matter of scientific discussion. For a holographic measurement in a TEM, a sample thickness of 200‐300 nm is normally used. This has the advantage, that a large phase signal can be expected. But the thick samples lead to strong dynamic diffraction conditions and thus a complicated material contrast. Hence, sample‐tilt and local thickness variations have a significant impact on the measurement result. Figure 2b shows a typical simulation result in the case of a 10 nm Al 0.2 Ga 0.8 N thin‐layer, grown on a c‐plane of the Wurzite GaN matrix. The strain of the layer is set to 1% and the polarization induced field to 1.5 MV/cm, according to the order of magnitude expected from literature [2]. The polarization induced field corresponds to an interface charge density of ±7.7 *10 12 cm ‐ 2 . The simulation results were filtered around the (0000)‐beam and the ±(0002)‐reflections (figure 3a). Typical results are shown in figure 3b. The phase profiles of the (0000)‐beam and diffracted ±(0002)‐beams show a slope within the Al 0.2 Ga 0.8 N ‐ layer. This slopes contain information about the actual polarization field and strain of the layer. We show that, despite the dynamic diffraction conditions, the slope can be evaluated with the standard approach from kinematic diffraction theory yielding precisely the strain and field strength, as given as input to the model. Nevertheless, one has to consider the dynamical diffraction conditions because they define the material contrast at the hetero interface and the actual signal amplitude within the Al 0.2 Ga 0.8 N ‐ layer. By adjusting the sample thickness and sample tilt the conditions can be optimized with respect to the signal amplitude. We suggest to use wedge shaped samples in order to obtain more experimental flexibility." @default.
• W4255014730 created "2022-05-12" @default.
• W4255014730 creator A5010682751 @default.
• W4255014730 creator A5061252401 @default.
• W4255014730 creator A5077075871 @default.
• W4255014730 date "2016-12-20" @default.
• W4255014730 modified "2023-10-18" @default.
• W4255014730 title "Holographic Measurement of Strain and Macroscopic Potentials in GaN Heterostrucutres" @default.
• W4255014730 cites W1989210356 @default.
• W4255014730 doi "https://doi.org/10.1002/9783527808465.emc2016.6077" @default.
• W4255014730 hasPublicationYear "2016" @default.
• W4255014730 type Work @default.
• W4255014730 citedByCount "0" @default.
• W4255014730 crossrefType "other" @default.
• W4255014730 hasAuthorship W4255014730A5010682751 @default.
• W4255014730 hasAuthorship W4255014730A5061252401 @default.
• W4255014730 hasAuthorship W4255014730A5077075871 @default.
• W4255014730 hasBestOaLocation W42550147301 @default.
• W4255014730 hasConcept C108225325 @default.
• W4255014730 hasConcept C120665830 @default.
• W4255014730 hasConcept C121332964 @default.
• W4255014730 hasConcept C147120987 @default.
• W4255014730 hasConcept C147789679 @default.
• W4255014730 hasConcept C180205008 @default.
• W4255014730 hasConcept C185592680 @default.
• W4255014730 hasConcept C187590223 @default.
• W4255014730 hasConcept C192562407 @default.
• W4255014730 hasConcept C205049153 @default.
• W4255014730 hasConcept C2776451378 @default.
• W4255014730 hasConcept C30475298 @default.
• W4255014730 hasConcept C44280652 @default.
• W4255014730 hasConcept C49040817 @default.
• W4255014730 hasConcept C62520636 @default.
• W4255014730 hasConceptScore W4255014730C108225325 @default.
• W4255014730 hasConceptScore W4255014730C120665830 @default.
• W4255014730 hasConceptScore W4255014730C121332964 @default.
• W4255014730 hasConceptScore W4255014730C147120987 @default.
• W4255014730 hasConceptScore W4255014730C147789679 @default.
• W4255014730 hasConceptScore W4255014730C180205008 @default.
• W4255014730 hasConceptScore W4255014730C185592680 @default.
• W4255014730 hasConceptScore W4255014730C187590223 @default.
• W4255014730 hasConceptScore W4255014730C192562407 @default.
• W4255014730 hasConceptScore W4255014730C205049153 @default.
• W4255014730 hasConceptScore W4255014730C2776451378 @default.
• W4255014730 hasConceptScore W4255014730C30475298 @default.
• W4255014730 hasConceptScore W4255014730C44280652 @default.
• W4255014730 hasConceptScore W4255014730C49040817 @default.
• W4255014730 hasConceptScore W4255014730C62520636 @default.
• W4255014730 hasLocation W42550147301 @default.
• W4255014730 hasOpenAccess W4255014730 @default.
• W4255014730 hasPrimaryLocation W42550147301 @default.
• W4255014730 hasRelatedWork W1985022883 @default.
• W4255014730 hasRelatedWork W2009167997 @default.
• W4255014730 hasRelatedWork W2019824708 @default.
• W4255014730 hasRelatedWork W2039395868 @default.
• W4255014730 hasRelatedWork W2064331538 @default.
• W4255014730 hasRelatedWork W2092765959 @default.
• W4255014730 hasRelatedWork W2244219204 @default.
• W4255014730 hasRelatedWork W3040456536 @default.
• W4255014730 hasRelatedWork W4229531658 @default.
• W4255014730 hasRelatedWork W2517312445 @default.
• W4255014730 isParatext "false" @default.
• W4255014730 isRetracted "false" @default.
• W4255014730 workType "other" @default.