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- W4255301598 abstract "The effect of the growth condition on the interaction of defects with solar irradiation for devices that use ZnO/Ga2O3 heterojunctions is studied. A Ga2O3 layer was grown on the heavily doped p-type GaAs wafer using a dry oxidation process. The surface of the Ga2O3 film grown with a low O2/N2 gas ratio is very flat, whereas there is a large number of cracks on the surface of the Ga2O3 film grown with a high O2/N2 gas ratio. This is because of the sensitivity of oxidation, nucleation and crystallization to an oxygen annealing ambient. Because of the strong visible-emission absorption for ZnO and Ga2O3 films, the devices that use ZnO/Ga2O3 heterojunctions exhibit the response properties to solar irradiation and photovoltaic behavior. An oxygen vacancy- (VO-), gallium vacancy- (VGa-) and VO-VGa complex-related band model is proposed to describe the transition processes for the photo-generation of carriers and the contribution to the photocurrent." @default.
- W4255301598 created "2022-05-12" @default.
- W4255301598 date "1981-03-01" @default.
- W4255301598 modified "2023-09-27" @default.
- W4255301598 title "Author index" @default.
- W4255301598 doi "https://doi.org/10.1016/0038-1098(81)91095-4" @default.
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