FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4255842360> ?p ?o ?g. }

• W4255842360 endingPage "578" @default.
• W4255842360 startingPage "578" @default.
• W4255842360 abstract "The crystalline structure, surface morphology, optical properties and purity of ZnTe layers grown by MOVPE were investigated. Various substrates, different combinations of metalorganics and various growth conditions were studied. The results of three different MOVPE growth systems and reactor cells are compared. A variety of methods were used to study the structure and morphology (e.g. TEM, HRTEM, X-ray diffraction, Nomarski microscopy, photo reflection, Raman scattering). The preparation of the GaAs and ZnTe surfaces is well advanced but problematic for GaSb. For heterostructures like ZnTe on GaAs (001) with about 7% mismatch, the crystalline structure is mainly dominated by interfacial misfit dislocations and threading dislocations penetrating about 300 nm into the ZnTe layer. With better matched substrates (GaSb or ZnTe) or different orientations (GaAs (111)), the threading dislocations can nearly be eliminated.The comparison of growth studies with MOVPE, MBE and ALE reveals that the initial growth of ZnTe on GaAs (001) is mainly determined by the misfit and its relaxation. The first ≈4 monolayers are characterized by a pseudomorphous, 2D growth mode. The following surface roughening is caused by a relaxation through a 3D growth mode with islands. Once the relaxation is completed, the surface smoothens and recovers the 2D growth mode. The initial growth stages, representing the Stranski-Krastanov mechanism, are dependent on the surface termination of the substrate and on the growth method and parameters. The surface morphology of thicker ZnTe layers (>0.1 μm on GaAs (001)) grown by MOVPE is solely determined by the conditions at the growing interface (adsorption and decomposition of the precursors, desorption of undesired species, quantities of released Zn and Te, surface stoichiometry). These interface conditions are dependent on the precursor combination, the kinetic or mass transport limitation and the reactor hydrodynamics.The studies of the layer properties were sometimes bothered by a thin native oxide with the structure ZnTe/Te/ZnO.Purity and optical quality were tested by low temperature PL. The strain induced by the cooling of the ZnTe/GaAs structures grown at 300–400°C renders the identification of the radiative transitions difficult. However, many transitions and radiative centers are now identified. Under many growth conditions, the (A0Asl, X1) transition which is due to As from substrate autodoping, dominates the spectra. Hence, stoichiometry and inhomogeneity of the GaAs substrates are reflected in the spectra. But also precursor combination, partial pressures and growth temperatures have a significant influence on the PL spectra. The substrate type (GaAs, GaSb, ZnTe) is reflected in the spectra by transitions due to outdiffusion and by the Y-lines which are related to the misfit dislocations. Transitions induced by layer contaminations like Cu, Li, O and N were found. With the alkyl combination DEZn/DIPTe, reproducible growth of samples is possible showing PL spectra dominated by free excitons. The frequently appearing I1c and I'1c transitions might be due to a VZn vacancy or a vacancy donor complex. Complex relations to the growth stoichiometry were found.SIMS measurements helped to further identify the layer impurities. The layer purity is affected by extrinsic impurities due to substrate outdiffusion (As, Ga), contaminations from growth system (O, Cu) and precursors (Li). Impurities like H and C (and N) which are intrinsic to the MOVPE process, depend on the dissociation kinetics of the precursors which are themselves dependent on the growth parameters (e.g. temperature, carrier gas). The origins of the extrinsic impurities are identified as far as possible." @default.
• W4255842360 created "2022-05-12" @default.
• W4255842360 date "1991-01-01" @default.
• W4255842360 modified "2023-10-05" @default.
• W4255842360 title "7268. Ion irradiation damage in noncrystalline FeCo thin films" @default.
• W4255842360 doi "https://doi.org/10.1016/0042-207x(91)91075-y" @default.
• W4255842360 hasPublicationYear "1991" @default.
• W4255842360 type Work @default.
• W4255842360 citedByCount "0" @default.
• W4255842360 crossrefType "journal-article" @default.
• W4255842360 hasConcept C110738630 @default.
• W4255842360 hasConcept C111368507 @default.
• W4255842360 hasConcept C127313418 @default.
• W4255842360 hasConcept C146088050 @default.
• W4255842360 hasConcept C15744967 @default.
• W4255842360 hasConcept C171250308 @default.
• W4255842360 hasConcept C175665537 @default.
• W4255842360 hasConcept C185592680 @default.
• W4255842360 hasConcept C192562407 @default.
• W4255842360 hasConcept C2776029896 @default.
• W4255842360 hasConcept C2777289219 @default.
• W4255842360 hasConcept C2779227376 @default.
• W4255842360 hasConcept C49040817 @default.
• W4255842360 hasConcept C499950583 @default.
• W4255842360 hasConcept C54355233 @default.
• W4255842360 hasConcept C7070889 @default.
• W4255842360 hasConcept C77805123 @default.
• W4255842360 hasConcept C79794668 @default.
• W4255842360 hasConcept C8010536 @default.
• W4255842360 hasConcept C86803240 @default.
• W4255842360 hasConceptScore W4255842360C110738630 @default.
• W4255842360 hasConceptScore W4255842360C111368507 @default.
• W4255842360 hasConceptScore W4255842360C127313418 @default.
• W4255842360 hasConceptScore W4255842360C146088050 @default.
• W4255842360 hasConceptScore W4255842360C15744967 @default.
• W4255842360 hasConceptScore W4255842360C171250308 @default.
• W4255842360 hasConceptScore W4255842360C175665537 @default.
• W4255842360 hasConceptScore W4255842360C185592680 @default.
• W4255842360 hasConceptScore W4255842360C192562407 @default.
• W4255842360 hasConceptScore W4255842360C2776029896 @default.
• W4255842360 hasConceptScore W4255842360C2777289219 @default.
• W4255842360 hasConceptScore W4255842360C2779227376 @default.
• W4255842360 hasConceptScore W4255842360C49040817 @default.
• W4255842360 hasConceptScore W4255842360C499950583 @default.
• W4255842360 hasConceptScore W4255842360C54355233 @default.
• W4255842360 hasConceptScore W4255842360C7070889 @default.
• W4255842360 hasConceptScore W4255842360C77805123 @default.
• W4255842360 hasConceptScore W4255842360C79794668 @default.
• W4255842360 hasConceptScore W4255842360C8010536 @default.
• W4255842360 hasConceptScore W4255842360C86803240 @default.
• W4255842360 hasIssue "8-9" @default.
• W4255842360 hasLocation W42558423601 @default.
• W4255842360 hasOpenAccess W4255842360 @default.
• W4255842360 hasPrimaryLocation W42558423601 @default.
• W4255842360 hasRelatedWork W1504272055 @default.
• W4255842360 hasRelatedWork W1666729138 @default.
• W4255842360 hasRelatedWork W1667218544 @default.
• W4255842360 hasRelatedWork W1991248429 @default.
• W4255842360 hasRelatedWork W2047683715 @default.
• W4255842360 hasRelatedWork W2055754760 @default.
• W4255842360 hasRelatedWork W2141259645 @default.
• W4255842360 hasRelatedWork W248139524 @default.
• W4255842360 hasRelatedWork W2528321637 @default.
• W4255842360 hasRelatedWork W2946249126 @default.
• W4255842360 hasVolume "42" @default.
• W4255842360 isParatext "false" @default.
• W4255842360 isRetracted "false" @default.
• W4255842360 workType "article" @default.