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- W4256306721 abstract "Crystal Research and TechnologyVolume 52, Issue 6 1770006 Cover PictureFree Access Cover Picture: Crystal Research and Technology 6'2017 First published: 19 June 2017 https://doi.org/10.1002/crat.201770006AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract A novel multi-crucible Bridgman method is developed to produce Ø2 inch Si-doped GaAs crystals which would be beneficial for efficiency increasing. Five placements are designed in the furnace means five ingots could be produced at the same time. The multi-crucible Bridgman furnace is heated by a couple of straight Si-Mo resistances and the temperature gradient ΔG in the furnace is about 10°C/cm. Twinning and high dislocation density are the main growth defects that often take place in the crystals. After the solid-liquid interface and crystal cooling rate are optimized, the Si-doped GaAs crystals with favorable single crystalline yield are successfully obtained. The average etching pits density (EPD) of optimized GaAs crystals is <1500/cm2. Full width at half maximum (FWHM) are all less than 60” that indicates GaAs crystals have high crystalline quality. The carrier concentration near the bottom and tail parts of ingots is in range of (4.5–5.9) × 1017/cm3 and (1.2–2.1) × 1018 /cm3 due to segregation of Si element in GaAs crystals. Accordingly, the mobility is decreased from 2128–2651 cm2/v.s to 1581–1854 cm2/v.s. The result proves such multi-crucible Bridgman method is a feasible way for industrial growth of Si-doped GaAs crystals for opto-electronic application. (Picture: Min Jin et al., 1700052, in this issue) Volume52, Issue6June 20171770006 RelatedInformation" @default.
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