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- W4256351694 abstract "The Tunnel Field Effect Transistor (TFET) which utilizes the band-to-band-tunneling (BTBT) generation current of a gated diode is regarded as promising candidate for ultra-low power circuits. TFETs with different geometries and operation modes have been proposed. In this work, we study different hetero-structure systems - InAs/Si and all-III-V (In0.53Ga0.47As/InP, InAs/GaSb) - and compare their performance in TFET applications. First, we evaluate the TCAD model by simulating realistic structures as the one shown in Fig. 1 and compare the results with measured current-voltage (IV) characteristics. Then we focus on 2D double-gate TFETs with gate-overlapped-source geometry (Fig. 2) which capture the essential physics." @default.
- W4256351694 created "2022-05-12" @default.
- W4256351694 date "2015-01-01" @default.
- W4256351694 modified "2023-09-26" @default.
- W4256351694 title "(Invited) Comparative Simulation Study of InAs/Si and All-III-V Hetero Tunnel FETs" @default.
- W4256351694 doi "https://doi.org/10.1149/ma2015-01/20/1334" @default.
- W4256351694 hasPublicationYear "2015" @default.
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