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- W426525838 abstract "Carrier transport and transport mechanisms are the essence of modern microelectronic devices. Illumination of a special class of optical devices generates free carriers in solid-state devices that eventually become collected electric currents. An important transport mechanism in microelectronic devices is hopping conduction form site to site. In this communication, we calculate Nearest Neighbor Hopping (NNH) current densities for III-V heterostructures embedded in the intrinsic layer of p-in geometries. We start from a general formalism that relates the density of states in individual wells with the transition probabilities from a quantum well state to any neighboring one, in a superlattice-geometry. In the process, we point out the fact that there is zero hopping-current without Fermi level splitting for any two consecutive layers. Next, and in the tight binding approximation (TBA), we relate the eigen-energies with the transition probabilities and conclude that NNH-currents seem to be of the order of 1mA/cm2, and depend on (a) device geometry (b) temperature (c) conduction band discontinuity and (d) Fermi level splitting." @default.
- W426525838 created "2016-06-24" @default.
- W426525838 creator A5048621246 @default.
- W426525838 date "2008-07-22" @default.
- W426525838 modified "2023-10-16" @default.
- W426525838 title "Hopping currents in III-V PV-heterostructures, for high efficiency solar cells (HESC's)" @default.
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