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- W4280490036 abstract "High-electron-mobility group III-V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the III-V family due to its advantage of both good n- and p-type device performance. Monolayer (ML) GaAs is the limit form of ultrathin GaAs. Here, a hydrogenated ML GaAs (GaAsH2) FET is simulated by ab initio quantum-transport methods. The n- and p-type ML GaAsH2 metal-oxide-semiconductor FETs (MOSFETs) can well satisfy the on-state current, delay time, power dissipation, and energy-delay product requirements of the International Technology Roadmap for Semiconductors until the gate length is scaled down to 3/4 and 3/5 nm for the high-performance/low-power applications, respectively. Therefore, ultrathin GaAs is a prominent channel candidate for devices in the post-Moore era. The p-type ML GaAsH2 MOSFETs with a 2% uniaxially compressive strain and the unstrained n-type counterparts have symmetrical performance for the high-performance application, making ultrathin GaAs applicable for complementary MOS integrated circuits." @default.
- W4280490036 created "2022-05-22" @default.
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- W4280490036 date "2022-05-16" @default.
- W4280490036 modified "2023-10-18" @default.
- W4280490036 title "Performance Limit of Ultrathin GaAs Transistors" @default.
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- W4280490036 doi "https://doi.org/10.1021/acsami.2c01134" @default.
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