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• W4280493475 abstract "The weak acoustic phonon scattering in graphene monolayer leads to high mobilities even at room temperatures. We identify the dominant role of the shear phonon mode scattering on the carrier mobility in AB-stacked graphene bilayer, which is absent in monolayer graphene. Using a microscopic tight-binding model, we reproduce experimental temperature dependence of mobilities in high-quality boron nitride encapsulated bilayer samples at temperatures up to ∼200 K. At elevated temperatures, the surface polar phonon scattering from boron nitride substrate contributes significantly to the measured mobilities of 15 000 to 20000 cm^{2}/Vs at room temperature and carrier concentration n∼10^{12} cm^{-2}. A screened surface polar phonon potential for a dual-encapsulated bilayer and transferable tight-binding model allows us to predict mobility scaling with temperature and band gap for both electrons and holes in agreement with the experiment." @default.
• W4280493475 created "2022-05-22" @default.
• W4280493475 creator A5007197576 @default.
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• W4280493475 date "2022-05-17" @default.
• W4280493475 modified "2023-09-30" @default.
• W4280493475 title "Phonon-Limited Mobility in <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mi>h</mml:mi></mml:mrow></mml:math> -BN Encapsulated <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mi>A</mml:mi><mml:mi>B</mml:mi></mml:mrow></mml:math> -Stacked Bilayer Graphene" @default.
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• W4280493475 doi "https://doi.org/10.1103/physrevlett.128.206602" @default.
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