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• W4280495565 endingPage "202104" @default.
• W4280495565 startingPage "202104" @default.
• W4280495565 abstract "In this work, we demonstrate vertically stacked multilayer sub-1-nm In 2 O 3 field-effect transistors (FETs) with surrounding gate in a back-end-of-line (BEOL) compatible low-temperature fabrication process. A typical bottom-gated single layer In 2 O 3 FET with maximum on-state current (I ON ) of 890 μA/ μm at V DS = 0.8 V and an on/off ratio over 10 6 is achieved with a channel length (L ch ) of 100 nm. The effects of HfO 2 capping and O 2 annealing are systematically studied, which is critical to realizing the multilayer FETs. Each atomically thin In 2 O 3 channel layer with a thickness (T IO ) of 0.9 nm is realized by atomic layer deposition (ALD) at 225 °C. Multilayer FETs with a number of In 2 O 3 layers up to 4 and 1.2 nm-thick HfO 2 between each individual layer are fabricated. An enhancement of on-state current (I ON ) from 183 μA in a single layer In 2 O 3 FET to 339 μA in a 4 layer device with an on/off ratio of 3.4 × 10 4 is achieved, demonstrating the key advantage of the multilayer FETs to improve the current. Several critical features, such as large-area growth, high uniformity, high reproducibility, ultrathin body, flexibility, and BEOL compatibility, have turned ALD In 2 O 3 into a noteworthy candidate for next-generation oxide semiconductor channel materials." @default.
• W4280495565 created "2022-05-22" @default.
• W4280495565 creator A5001234843 @default.
• W4280495565 creator A5012558946 @default.
• W4280495565 creator A5045408498 @default.
• W4280495565 creator A5051411691 @default.
• W4280495565 creator A5059106002 @default.
• W4280495565 creator A5063222844 @default.
• W4280495565 creator A5063753083 @default.
• W4280495565 creator A5076139701 @default.
• W4280495565 creator A5087982402 @default.
• W4280495565 date "2022-05-16" @default.
• W4280495565 modified "2023-10-14" @default.
• W4280495565 title "Vertically stacked multilayer atomic-layer-deposited sub-1-nm In₂O₃ field-effect transistors with back-end-of-line compatibility" @default.
• W4280495565 cites W1982968328 @default.
• W4280495565 cites W1994277498 @default.
• W4280495565 cites W1999589524 @default.
• W4280495565 cites W2018540978 @default.
• W4280495565 cites W2020281990 @default.
• W4280495565 cites W2030195401 @default.
• W4280495565 cites W2131716975 @default.
• W4280495565 cites W2166232528 @default.
• W4280495565 cites W2766176175 @default.
• W4280495565 cites W2968389934 @default.
• W4280495565 cites W3080918441 @default.
• W4280495565 cites W3108774866 @default.
• W4280495565 cites W3112647770 @default.
• W4280495565 cites W3117971052 @default.
• W4280495565 cites W3128169148 @default.
• W4280495565 cites W3128233593 @default.
• W4280495565 cites W3133792218 @default.
• W4280495565 cites W3150746306 @default.
• W4280495565 cites W565854973 @default.
• W4280495565 doi "https://doi.org/10.1063/5.0092936" @default.
• W4280495565 hasPublicationYear "2022" @default.
• W4280495565 type Work @default.
• W4280495565 citedByCount "4" @default.
• W4280495565 countsByYear W42804955652022 @default.
• W4280495565 countsByYear W42804955652023 @default.
• W4280495565 crossrefType "journal-article" @default.
• W4280495565 hasAuthorship W4280495565A5001234843 @default.
• W4280495565 hasAuthorship W4280495565A5012558946 @default.
• W4280495565 hasAuthorship W4280495565A5045408498 @default.
• W4280495565 hasAuthorship W4280495565A5051411691 @default.
• W4280495565 hasAuthorship W4280495565A5059106002 @default.
• W4280495565 hasAuthorship W4280495565A5063222844 @default.
• W4280495565 hasAuthorship W4280495565A5063753083 @default.
• W4280495565 hasAuthorship W4280495565A5076139701 @default.
• W4280495565 hasAuthorship W4280495565A5087982402 @default.
• W4280495565 hasBestOaLocation W42804955651 @default.
• W4280495565 hasConcept C119599485 @default.
• W4280495565 hasConcept C127413603 @default.
• W4280495565 hasConcept C136525101 @default.
• W4280495565 hasConcept C142724271 @default.
• W4280495565 hasConcept C145598152 @default.
• W4280495565 hasConcept C159985019 @default.
• W4280495565 hasConcept C165801399 @default.
• W4280495565 hasConcept C171250308 @default.
• W4280495565 hasConcept C172385210 @default.
• W4280495565 hasConcept C192562407 @default.
• W4280495565 hasConcept C204787440 @default.
• W4280495565 hasConcept C2777855556 @default.
• W4280495565 hasConcept C2779227376 @default.
• W4280495565 hasConcept C49040817 @default.
• W4280495565 hasConcept C69544855 @default.
• W4280495565 hasConcept C71924100 @default.
• W4280495565 hasConceptScore W4280495565C119599485 @default.
• W4280495565 hasConceptScore W4280495565C127413603 @default.
• W4280495565 hasConceptScore W4280495565C136525101 @default.
• W4280495565 hasConceptScore W4280495565C142724271 @default.
• W4280495565 hasConceptScore W4280495565C145598152 @default.
• W4280495565 hasConceptScore W4280495565C159985019 @default.
• W4280495565 hasConceptScore W4280495565C165801399 @default.
• W4280495565 hasConceptScore W4280495565C171250308 @default.
• W4280495565 hasConceptScore W4280495565C172385210 @default.
• W4280495565 hasConceptScore W4280495565C192562407 @default.
• W4280495565 hasConceptScore W4280495565C204787440 @default.
• W4280495565 hasConceptScore W4280495565C2777855556 @default.
• W4280495565 hasConceptScore W4280495565C2779227376 @default.
• W4280495565 hasConceptScore W4280495565C49040817 @default.
• W4280495565 hasConceptScore W4280495565C69544855 @default.
• W4280495565 hasConceptScore W4280495565C71924100 @default.
• W4280495565 hasIssue "20" @default.
• W4280495565 hasLocation W42804955651 @default.
• W4280495565 hasOpenAccess W4280495565 @default.
• W4280495565 hasPrimaryLocation W42804955651 @default.
• W4280495565 hasRelatedWork W1994495097 @default.
• W4280495565 hasRelatedWork W2032996658 @default.
• W4280495565 hasRelatedWork W2066018626 @default.
• W4280495565 hasRelatedWork W2139871202 @default.
• W4280495565 hasRelatedWork W2317642365 @default.
• W4280495565 hasRelatedWork W2587513110 @default.
• W4280495565 hasRelatedWork W2599481150 @default.
• W4280495565 hasRelatedWork W2949947112 @default.
• W4280495565 hasRelatedWork W3175146547 @default.
• W4280495565 hasRelatedWork W4297896704 @default.
• W4280495565 hasVolume "120" @default.
• W4280495565 isParatext "false" @default.

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