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- W4280495867 abstract "Temperature has always been considered as an essential factor for almost all kinds of semiconductor-based electronic components. In this work, temperature-dependent synaptic plasticity behaviors, which are mimicked by the indium-gallium-zinc oxide thin-film transistors gated with sputtered SiO2 electrolytes, have been studied. With the temperature increasing from 303 to 323 K, the electrolyte capacitance decreases from 0.42 to 0.11 μF cm-2. The mobility increases from 1.4 to 3.7 cm2 V-1 s-1, and the threshold voltage negatively shifts from -0.23 to -0.51 V. Synaptic behaviors under both a single pulse and multiple pulses are employed to study the temperature dependence. With the temperature increasing from 303 to 323 K, the post-synaptic current (PSC) at the resting state increases from 1.8 to 7.3 μA. Under a single gate pulse of 1 V and 1 s, the PSC signal altitude and the PSC retention time decrease from 2.0 to 0.7 μA and 5.1 × 102 to 2.5 ms, respectively. A physical model based on the electric field-induced ion drifting, ionic-electronic coupling, and gradient-coordinated ion diffusion is proposed to understand these temperature-dependent synaptic behaviors. Based on the experimental data on individual transistors, temperature-modulated pattern learning and memorizing behaviors are conceptually demonstrated. The in-depth investigation of the temperature dependence helps pave the way for further electrolyte-gated transistor-based neuromorphic applications." @default.
- W4280495867 created "2022-05-22" @default.
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- W4280495867 date "2022-05-18" @default.
- W4280495867 modified "2023-09-27" @default.
- W4280495867 title "Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors" @default.
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- W4280495867 doi "https://doi.org/10.1021/acsaelm.2c00395" @default.
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