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- W4280496061 endingPage "1640" @default.
- W4280496061 startingPage "1640" @default.
- W4280496061 abstract "Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current-voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO2 interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed." @default.
- W4280496061 created "2022-05-22" @default.
- W4280496061 creator A5018491286 @default.
- W4280496061 creator A5022852443 @default.
- W4280496061 creator A5060475596 @default.
- W4280496061 creator A5065042205 @default.
- W4280496061 creator A5073324754 @default.
- W4280496061 date "2022-05-11" @default.
- W4280496061 modified "2023-10-16" @default.
- W4280496061 title "The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes" @default.
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