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- W4280497789 abstract "Photothermal detectors have attracted tremendous research interest in uncooled infrared imaging technology but with a relatively slow response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated as a photothermal detector to realize high-performance infrared response beyond the bandgap limitation. Vertically standing SnSe-NR arrays are deposited on Si by a sputtering method. Through manipulating the photoinduced thermoelectric (PTE) behavior along the c-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage photoresponse with a high photoresponsivity of 106.3 V W-1 and high optical detectivity of 1.9 × 1010 cm Hz1/2 W-1 under 1342 nm illumination. Importantly, an ultrafast infrared photothermal response is achieved with the rise/fall time of 11.3/258.7 μs. Moreover, the coupling effect between the PTE behavior and external thermal excitation enables an improved response by 288.4%. The work not only offers a new strategy to develop high-speed photothermal detectors but also performs a deep understanding of the PTE behavior in a heterojunction system." @default.
- W4280497789 created "2022-05-22" @default.
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- W4280497789 date "2022-05-18" @default.
- W4280497789 modified "2023-10-05" @default.
- W4280497789 title "Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior" @default.
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- W4280497789 doi "https://doi.org/10.1021/acsami.2c02557" @default.
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