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- W4280641964 abstract "Abstract Interface defects in state-of-the-art semiconductors have a strong impact on device performance. These defects are often generated during device fabrication, in which a variety of plasma processing is used for deposition, etching and implantation. Here, we present the ion-induced defects in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) heterojunction. The experiments of argon ion (Ar + ) irradiation over an a-Si:H/c-Si stack are systematically performed. The results suggest that the defects are generated not only by the impact of Ar + (i.e. well-known effects), but also by another unique effect associated with “hot” mobile hydrogens (H). The mobile H atoms generated near the a-Si:H surface by the impact of Ar + diffuse deeper, and they generate the a-Si:H/c-Si interface defects such as dangling bonds. The diffusion length of mobile H is determined to be 2.7 ± 0.3 nm, which indicates efficient reactions of mobile H with weak bonds in an a-Si:H network structure." @default.
- W4280641964 created "2022-05-22" @default.
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- W4280641964 date "2022-05-01" @default.
- W4280641964 modified "2023-10-16" @default.
- W4280641964 title "Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens" @default.
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- W4280641964 doi "https://doi.org/10.35848/1347-4065/ac5210" @default.
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