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- W4281250802 abstract "Boron doped polycrystalline diamond (BDD) films have shown great potential in electrochemical applications. However, the high background current and poor signal-to-noise ratio, caused by the crystal defects produced during the growth process, limit its application. This paper reports the controllable synthesis of a diamond/graphene/diamond (DGD) sandwich structure. The graphene interlayer is designed to act as a high-speed tunnel for the electronic transmission, and the outer diamond layers can completely maintain its inherent excellent features. This sandwich structure can effectively avoid the negative impact of surface non-diamond carbon relative to material properties, and obtain a wider electrochemical window (3.65 V) and a lower background current (about 0.4 μA cm−2). At the same time, this DGD electrode exhibits fast heterogeneous electron transfer in both the inner (Fe(CN)6−3/−4) and outer (Ru(NH3)6+2/+3) redox systems. By changing the preparation process of the middle G layer, the growth process of the G layer and its influence on the energy band and electrochemical performance of the electrode are analyzed in detail. In general, the DGD sandwich structure methodology paves a novel route for designing high-performance conductive diamond electrodes and holding great promise in electrochemical applications." @default.
- W4281250802 created "2022-05-23" @default.
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- W4281250802 date "2022-08-01" @default.
- W4281250802 modified "2023-10-05" @default.
- W4281250802 title "Synthesis of graphene interlayer diamond films for enhanced electrochemical performance" @default.
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- W4281250802 doi "https://doi.org/10.1016/j.carbon.2022.05.038" @default.
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