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• W4281254966 abstract "Abstract Attempts to dope halide perovskites (HaPs) extrinsically have been mostly unsuccessful. Still, oxygen (O 2 ) is an efficient p‐dopant for polycrystalline HaP films. To an extent, this doping is reversible, i.e., the films can be de‐doped by decreasing the O 2 partial pressure. Here results are reported, aimed at understanding the mechanism of such reversible doping, as it has been argued that doping involves interaction of oxygen with defects inside bulk HaP. These experimental results clearly point out that O 2 ‐surface interactions suffice to dope the bulk of the films. Such behavior fits what is known for other polycrystalline semiconductors, where surface charge transfer‐adducts can form and be removed. Thus, controlling the O 2 partial pressure to which the HaP film is exposed, can, after proper encapsulation, achieve the desired bulk doping of the film." @default.
• W4281254966 created "2022-05-23" @default.
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• W4281254966 date "2022-05-21" @default.
• W4281254966 modified "2023-10-01" @default.
• W4281254966 title "Surface Interactions of Oxygen Suffice to P‐Dope the Halide Perovskites" @default.
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• W4281254966 doi "https://doi.org/10.1002/admi.202200569" @default.
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