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- W4281384080 abstract "Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies." @default.
- W4281384080 created "2022-05-25" @default.
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- W4281384080 date "2022-05-20" @default.
- W4281384080 modified "2023-10-13" @default.
- W4281384080 title "Spin-defect characteristics of single sulfur vacancies in monolayer $text{MoS}_2$" @default.
- W4281384080 doi "https://doi.org/10.48550/arxiv.2205.10286" @default.
- W4281384080 hasPublicationYear "2022" @default.
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