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• W4281566458 abstract "Recently, WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> has been considered a promising photodetector material due to its benefits of atomic thickness, easily customized single-crystal van der Waals heterostructure, and efficient photon absorption. However, the photosensitivity obtained from the WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> photodetector is still unsatisfactory. Therefore, this article proposes a WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based high sensitivity field-effect transistor (FET) based on avalanche multiplication. Under 532-nm illumination, WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> FET has ultralow dark current ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$10^{-{12}}$ </tex-math></inline-formula> A), high responsivity (74 A/W), and high detectivity ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$1.45times 10^{{13}}$ </tex-math></inline-formula> Jones). In addition, the avalanche breakdown voltage of the device is reduced by employing graphene as an electrode. Because the height of the Schottky barrier can be reduced by replacing the Au electrode with a graphene electrode, the lower Schottky barrier can result in higher electric field intensity in the WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> channel. Meanwhile, the unique transfer and output characteristics are observed in WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> FET with graphene electrode. The inherent mechanisms are discussed, considering the Fermi-level tenability of graphene flakes and ambipolar transport properties of WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . These results open a promising door to realize the WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> FET with low power consumption and ultrahigh photoresponsivity, which will be ideal for high-performance photodetectors." @default.
• W4281566458 created "2022-05-27" @default.
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• W4281566458 date "2022-06-01" @default.
• W4281566458 modified "2023-10-16" @default.
• W4281566458 title "Gate Voltage Dependence Ultrahigh Sensitivity WS₂ Avalanche Field-Effect Transistor" @default.
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• W4281566458 doi "https://doi.org/10.1109/ted.2022.3166714" @default.
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