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• W4281568376 abstract "Schottky diode is the fundamental building blocks for modern electronics and optoelectronics. Reducing the semiconductor layer thickness could shrink the vertical size of a Schottky diode, improving its speed and integration density. Here, we demonstrate a new approach to fabricate a Schottky diode with ultrashort physical length approaching atomic limit. By mechanically laminating prefabricated metal electrodes on both-sides of two-dimensional MoS2, the intrinsic metal-semiconductor interfaces can be well retained. As a result, we demonstrate the thinnest Schottky diode with a length of 2.6 nm and decent rectification behavior. Furthermore, with a diode length smaller than the semiconductor depletion length, the carrier transport mechanisms are investigated and explained by thickness-dependent and temperature-dependent electrical measurements. Our study not only pushes the scaling limit of a Schottky diode but also provides a general double-sided electrodes integration approach for other ultrathin vertical devices." @default.
• W4281568376 created "2022-05-27" @default.
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• W4281568376 date "2022-05-26" @default.
• W4281568376 modified "2023-10-17" @default.
• W4281568376 title "Realization of Ultra-Scaled MoS₂ Vertical Diodes via Double-Side Electrodes Lamination" @default.
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• W4281568376 doi "https://doi.org/10.1021/acs.nanolett.2c00922" @default.
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