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- W4281647580 abstract "We report new results on Linear Mode HgCdTe electron Avalanche Photodiodes (e-APDs) for applications in the 500 - 3000 nm band at 200-240K with high gain, low excess noise factor, low dark current density and high quantum efficiency. Results from two classes of devices will be reported: first the conventional HgCdTe e-APD grown by LPE with homogeneous composition and second bandgap engineered HgCdTe e-APDs grown by MBE. Detailed characterization data of the e-APDs including gain, dark current density and excess noise factor will be reported and compared with modeling results." @default.
- W4281647580 created "2022-06-13" @default.
- W4281647580 creator A5017131854 @default.
- W4281647580 date "2022-05-30" @default.
- W4281647580 modified "2023-09-23" @default.
- W4281647580 title "High operating temperature linear mode HgCdTe avalanche photodiodes for the extended SWIR" @default.
- W4281647580 doi "https://doi.org/10.1117/12.2622345" @default.
- W4281647580 hasPublicationYear "2022" @default.
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