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- W4282048128 abstract "Abstract We have illustrated the thermal oxidation of Ni as gate dielectrics to improve the characteristics of GaN-based metal oxide semiconductor high electron mobility transistors (HEMTs). The oxide is formed by a pre-deposition of a thin film followed by oxidation in pure O 2 ambient. The formation and thickness of the oxides are confirmed through x-ray photoelectron spectroscopy and transmission electron microscopy. NiO x is found to have an energy band gap of 3.7 eV determined using O 1s energy loss spectra. NiO x is found to provide negative (1.7 eV) valence band offsets with AlGaN. The potential use of the oxides has been confirmed by the significant improvement in drive current, transconductance, subthreshold swing, unity current gain frequency, and gate current leakage over the Schottky barrier HEMTs (SB-HEMTs). We have observed a positive shift in threshold voltage for NiO x -based gate dielectric devices compared to that of the SB-HEMTs." @default.
- W4282048128 created "2022-06-13" @default.
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- W4282048128 date "2022-06-21" @default.
- W4282048128 modified "2023-10-01" @default.
- W4282048128 title "Performance Improvement in NiOx-based GaN MOS-HEMTs" @default.
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- W4282048128 doi "https://doi.org/10.1088/1361-6641/ac77ad" @default.
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