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- W4282832238 abstract "In this paper, an enhanced structures of GaN HEMT by means of Back Barriers (BBs) is investigated to improve the electro-thermal behavior of the device for power electronics application. Different materials for the BB including GaN:UID and AlGaN were investigated. TCAD physical model was used to simulate and investigate the thermal characteristics of the GaN-HEMT. The results show an optimal performance with AlGaN barrier with respect to GaN:UID." @default.
- W4282832238 created "2022-06-15" @default.
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- W4282832238 date "2022-03-29" @default.
- W4282832238 modified "2023-09-26" @default.
- W4282832238 title "GaN HEMT with Enhanced Back-Barrier for Power Electronics Applications" @default.
- W4282832238 doi "https://doi.org/10.1109/icpea51060.2022.9791211" @default.
- W4282832238 hasPublicationYear "2022" @default.
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