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- W4282832789 endingPage "2003" @default.
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- W4282832789 abstract "Germanium selenide (GeSe) thin films were fabricated by employing femtosecond pulsed-laser deposition (fs-PLD) on silicon (100) substrates at various substrate temperatures, ranging from 25 °C to 600 °C. The thin films’ surface morphology qualities and optical properties were studied by utilising transmission electron microscopy (TEM) and X-ray diffraction (XRD). The X-ray diffraction result signifies that the thin films deposited on the silicon at a substrate temperature below 400 °C were amorphous Ge-Se. In contrast, those grown at 400 °C and above exhibited crystallised peaks of Ge-Se orthorhombic and tetragonal structures. The deposition growth rate of the thin films was also found to decrease substantially with increasing substrate temperature. These results show that the fs-PLD process has great potential for fabricating good quality Ge-Se thin film. This technique could enable the manufacture of modern optoelectronic devices for applications in optical communication, sensing, and ovonic threshold switching for the high-density crossbar memory array." @default.
- W4282832789 created "2022-06-15" @default.
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- W4282832789 date "2022-06-10" @default.
- W4282832789 modified "2023-10-17" @default.
- W4282832789 title "Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures" @default.
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- W4282832789 doi "https://doi.org/10.3390/nano12122003" @default.
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