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- W4283080384 abstract "We report fabrication and characterisation of the erbium-doped planar waveguide on a silica-on-silicon (SOS) wafer-offering low loss and strong light confinement suitable for engineering optical waveguide amplifier for the C-band (1530–1565 nm) of the optical fibre communication. Here we describe an ultrafast laser plasma doping (ULPD) technique that is carried out using the plasma induced by a femtosecond laser (wavelength 800 nm) with a repetition rate of 10 kHz and a pulse duration of 45 fs. The ULPD method presented here had been applied successfully for rare earth materials doping on SOS substrates previously using a fs-laser with a pulse duration of ∼100 fs and at a repetition rate of 1 kHz. The fabricated planar optical waveguide layer onto the SOS substrate has been analysed for thickness, refractive index, optical propagation loss, photoluminescence intensity, and photoluminescence lifetime. We report a low propagation loss of <0.4 dB/cm in the C-Band, a long lifetime of 13.21 ms at 1532 nm, and the largest lifetime-density product 6.344 ×10 19 s cm −3. The low loss planar slab waveguide and a high lifetime-density product promise the further possibility of fabricating strip-loaded waveguides on the SOS platform. The proposed active waveguide fabrication methodology is potentially useful for manufacturing planar integrated optical waveguide amplifiers and lasers compatible with silicon-based photonic integrated circuits." @default.
- W4283080384 created "2022-06-19" @default.
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- W4283080384 date "2022-11-01" @default.
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- W4283080384 title "Manufacturing of Er<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline id=d1e72 altimg=si2.svg><mml:msup><mml:mrow /><mml:mrow><mml:mi mathvariant=bold>3+</mml:mi></mml:mrow></mml:msup></mml:math>-doped planar waveguides on silica-on-silicon using femtosecond laser-induced plasma" @default.
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- W4283080384 doi "https://doi.org/10.1016/j.optcom.2022.128614" @default.
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