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- W4283155735 abstract "• Detailed magnetic and magneto-transport studies are performed on the Mn-doped SiGe films fabricated by r. f. magnetron sputtering aided with rapid thermal annealing. • The ferromagnetism is confirmed by the Curie-Weiss law fitting of susceptibility, the magnetic hysteresis loops and the anomalous Hall effect in the films. • The origin of the ferromagnetism comes from a hole-mediated process, evidenced by structural characterizations of substitutional doping of Mn elements providing both holes and local magnetic moments, and by X-ray magnetic circular dichroism investigation of magnetic moments in the films. Mn-doped polycrystalline SiGe thin films are fabricated by radio frequency magnetron sputtering and subsequent rapid thermal annealing. Structural characterizations show that the Mn atoms are distributed uniformly in the SiGe matrix and mainly occupy the substitutional sites with 2+ state. X-ray magnetic circular dichroism signals reveal the spin and orbital magnetic moment information of the samples. Magnetic measurements show that the Curie temperature is up to ∼ 290 K and the effective magnetic moment is about 1.57 μ B /Mn. Magneto-transport measurements reveal anomalous Hall effect, another signal of ferromagnetism in the samples. Our results provide insights into the structure and the ferromagnetism of the Mn-doped SiGe thin films and may be useful for related spintronic applications." @default.
- W4283155735 created "2022-06-21" @default.
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- W4283155735 date "2022-10-01" @default.
- W4283155735 modified "2023-10-16" @default.
- W4283155735 title "Structural, magnetic and Magneto-transport properties of Mn-doped SiGe thin films" @default.
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- W4283155735 doi "https://doi.org/10.1016/j.jmmm.2022.169630" @default.
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