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• W4283219783 abstract "The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with trench MIS structure and an embedded p-GaN protection layer (junction-trench MIS barrier Schottky diodes, J-TMBS). The trench structure and lateral p-n junctions can be achieved by selectively etching the very thin p-GaN and then regrowing n-GaN. Therefore, the fabrication technology avoids the selective area p-type doping process, and the dry etching damage and poor sidewall regrowth interface issue, which are serious in GaN Merged pn/Schottky (MPS) diodes, can also be alleviated for the proposed J-TMBS. Compared with the optimized GaN trench MIS barrier Schottky (TMBS) diodes, the surge current capability and dielectric reliability of the proposed J-TMBS are significantly improved (the electric field of the dielectric layer and maximum lattice temperature under the surge test can be reduced by 448% and 202%, respectively). In addition, the specific on-resistance (Ron,sp) and breakdown voltage remain basically unchanged compared with TMBS. Compared with the optimized GaN MPS diodes, the proposed structure improves the specific on-resistance by 17.2% benefiting from the reduced area of the JFET region without degrading the reverse I–V characteristics and surge current capability. The proposed J-TMBS exhibits potential in practical high voltage (&gt;600 V) application of GaN Schottky power diodes." @default.
• W4283219783 created "2022-06-22" @default.
• W4283219783 creator A5007309685 @default.
• W4283219783 creator A5026984704 @default.
• W4283219783 creator A5030064573 @default.
• W4283219783 creator A5034944061 @default.
• W4283219783 creator A5035784034 @default.
• W4283219783 creator A5046781760 @default.
• W4283219783 creator A5070834732 @default.
• W4283219783 creator A5082037435 @default.
• W4283219783 date "2022-06-01" @default.
• W4283219783 modified "2023-09-29" @default.
• W4283219783 title "Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability" @default.
• W4283219783 cites W1982681306 @default.
• W4283219783 cites W1990215338 @default.
• W4283219783 cites W2024121067 @default.
• W4283219783 cites W2029347203 @default.
• W4283219783 cites W2045473732 @default.
• W4283219783 cites W2052351478 @default.
• W4283219783 cites W2071136035 @default.
• W4283219783 cites W2076035440 @default.
• W4283219783 cites W2103552551 @default.
• W4283219783 cites W2137374832 @default.
• W4283219783 cites W2170700735 @default.
• W4283219783 cites W2201743863 @default.
• W4283219783 cites W2276619586 @default.
• W4283219783 cites W2565994532 @default.
• W4283219783 cites W2579751981 @default.
• W4283219783 cites W2593386225 @default.
• W4283219783 cites W2619766055 @default.
• W4283219783 cites W2732209006 @default.
• W4283219783 cites W2733845047 @default.
• W4283219783 cites W2767547851 @default.
• W4283219783 cites W2788013722 @default.
• W4283219783 cites W2789794433 @default.
• W4283219783 cites W2902327905 @default.
• W4283219783 cites W2904515693 @default.
• W4283219783 cites W2910244696 @default.
• W4283219783 cites W2917673643 @default.
• W4283219783 cites W2944446371 @default.
• W4283219783 cites W2946509462 @default.
• W4283219783 cites W2946763836 @default.
• W4283219783 cites W2962217763 @default.
• W4283219783 cites W2965001039 @default.
• W4283219783 cites W2996631566 @default.
• W4283219783 cites W2998477993 @default.
• W4283219783 cites W3002430426 @default.
• W4283219783 cites W3013412803 @default.
• W4283219783 cites W3048180461 @default.
• W4283219783 cites W3072890740 @default.
• W4283219783 cites W3081662869 @default.
• W4283219783 cites W3085615067 @default.
• W4283219783 cites W3097539232 @default.
• W4283219783 cites W3125866177 @default.
• W4283219783 cites W3160599690 @default.
• W4283219783 cites W3165787220 @default.
• W4283219783 cites W3176822370 @default.
• W4283219783 cites W859670032 @default.
• W4283219783 doi "https://doi.org/10.1063/5.0098669" @default.
• W4283219783 hasPublicationYear "2022" @default.
• W4283219783 type Work @default.
• W4283219783 citedByCount "0" @default.
• W4283219783 crossrefType "journal-article" @default.
• W4283219783 hasAuthorship W4283219783A5007309685 @default.
• W4283219783 hasAuthorship W4283219783A5026984704 @default.
• W4283219783 hasAuthorship W4283219783A5030064573 @default.
• W4283219783 hasAuthorship W4283219783A5034944061 @default.
• W4283219783 hasAuthorship W4283219783A5035784034 @default.
• W4283219783 hasAuthorship W4283219783A5046781760 @default.
• W4283219783 hasAuthorship W4283219783A5070834732 @default.
• W4283219783 hasAuthorship W4283219783A5082037435 @default.
• W4283219783 hasBestOaLocation W42832197831 @default.
• W4283219783 hasConcept C119321828 @default.
• W4283219783 hasConcept C119599485 @default.
• W4283219783 hasConcept C127413603 @default.
• W4283219783 hasConcept C133386390 @default.
• W4283219783 hasConcept C155310634 @default.
• W4283219783 hasConcept C16115445 @default.
• W4283219783 hasConcept C165801399 @default.
• W4283219783 hasConcept C171250308 @default.
• W4283219783 hasConcept C189278905 @default.
• W4283219783 hasConcept C192562407 @default.
• W4283219783 hasConcept C205200001 @default.
• W4283219783 hasConcept C2779227376 @default.
• W4283219783 hasConcept C49040817 @default.
• W4283219783 hasConcept C57863236 @default.
• W4283219783 hasConcept C78434282 @default.
• W4283219783 hasConceptScore W4283219783C119321828 @default.
• W4283219783 hasConceptScore W4283219783C119599485 @default.
• W4283219783 hasConceptScore W4283219783C127413603 @default.
• W4283219783 hasConceptScore W4283219783C133386390 @default.
• W4283219783 hasConceptScore W4283219783C155310634 @default.
• W4283219783 hasConceptScore W4283219783C16115445 @default.
• W4283219783 hasConceptScore W4283219783C165801399 @default.
• W4283219783 hasConceptScore W4283219783C171250308 @default.
• W4283219783 hasConceptScore W4283219783C189278905 @default.
• W4283219783 hasConceptScore W4283219783C192562407 @default.
• W4283219783 hasConceptScore W4283219783C205200001 @default.
• W4283219783 hasConceptScore W4283219783C2779227376 @default.
• W4283219783 hasConceptScore W4283219783C49040817 @default.

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