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- W4283373503 abstract "The superconductivity in bulk FeSe depends sensitively on the stoichiometry, ditto for the monolayer FeSe films grown on $mathrm{SrTi}{mathrm{O}}_{3ensuremath{-}ensuremath{delta}}$ and other substrates. To tune the stoichiometry, we deposit Fe onto monolayer FeSe films after epitaxial growth. Using in situ low-temperature scanning tunneling microscopy/spectroscopy, we find that the postdeposited Fe atoms incorporate into monolayer films and combine with excess Se to form FeSe, with an upper coverage limit of ensuremath{sim}0.4 unit-cell. Consequently, the superconducting gap concentrates in 10 to 12 meV. The work demonstrates a simple method for stoichiometry tuning and improving the spatial uniformity of monolayer FeSe films. Compared with the gap of ensuremath{sim}15 to 20 meV for the annealed films, the smaller superconducting gap indicates weakened FeSe-${mathrm{TiO}}_{2}$ coupling due to interfacial Se atom substitution." @default.
- W4283373503 created "2022-06-25" @default.
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- W4283373503 date "2022-06-22" @default.
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- W4283373503 title "Post-growth Fe deposition on the superconductivity of monolayer FeSe films on <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mrow><mml:mi>SrTi</mml:mi><mml:msub><mml:mi mathvariant=normal>O</mml:mi><mml:mrow><mml:mn>3</mml:mn><mml:mo>−</mml:mo><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>" @default.
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- W4283373503 doi "https://doi.org/10.1103/physrevmaterials.6.064803" @default.
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