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- W4283788173 abstract "Abstract The atomic structure of gallium oxide at the Al 2 O 3 /GaN interface was investigated using photoelectron holography. An amorphous Al 2 O 3 layer was formed on a homoepitaxially grown n-type GaN surface by atomic layer deposition at 300 °C. The photoelectron holograms were measured by a display-type retarding field analyzer. From the forward-focusing peaks in the photoelectron hologram of Ga 3d, we confirmed that a layer of gallium oxide ordered structure is found at the Al 2 O 3 /GaN interface, and the Ga–O–Ga lattice constant on the c -axis was 1.2 times longer than the Ga–N–Ga distance of the GaN crystal structure." @default.
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- W4283788173 date "2022-07-13" @default.
- W4283788173 modified "2023-09-23" @default.
- W4283788173 title "Atomic structure analysis of gallium oxide at the Al<sub>2</sub>O<sub>3</sub>/GaN interface using photoelectron holography" @default.
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- W4283788173 doi "https://doi.org/10.35848/1882-0786/ac7dd9" @default.
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