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• W4283822011 abstract "Owing to the numerous applications including optical communication, night vision, remote sensing, and security monitoring, a great interest has emerged in the development of the NIR (near-infrared) photodetectors. In this study, the self-biased Si/CuInSe2 heterojunction photodetectors have been developed and the annealing temperature has been optimized. CuInSe2 thin films have been prepared using the sequential elemental layer deposition followed by annealing at 550, 600, and 650 °C. The CuInSe2 annealed at 550 °C and 650 °C revealed the mixed-phase formation corresponding to CuInSe2 (tetragonal) and Cu7Se4 (Cubic). The CuInSe2 annealed at 600 °C confirmed the transition from mixed-phase to single-phase CuInSe2 tetragonal structure. The impact of annealing temperature-dependent phase formation on the optoelectronic characteristics of Si/CuInSe2 heterojunction has been studied. The Si/CuInSe2 heterojunction formation and photodetection in the self-biased mode have been investigated under varying Halogen light intensity and wavelength-dependent light. The highly sensitive, broadband spectral response and enhanced detectivity in the self-biased mode have been explored in the vicinity of varying annealing temperatures. The optimum Si/CuInSe2 heterojunction photodetector performance was achieved at 600 °C possessing the sensitivity, detectivity, and LDR up to 2.4×103, 0.05×1012 Jones, and 68 dB under Halogen light exposure and 0.8×104, 0.55×1012 Jones and 79 dB under 980 nm light. The present study provides useful insight into the Si/CuInSe2 heterojunction development as an optoelectronic device providing the correlation between the fundamental characteristics of CuInSe2 and its development as a broadband photodetector possessing excellent device performance in the NIR range." @default.
• W4283822011 created "2022-07-06" @default.
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• W4283822011 date "2022-11-01" @default.
• W4283822011 modified "2023-09-25" @default.
• W4283822011 title "Temperature-dependent phase formation of CuInSe2 for self-biased, broadband Si/CuInSe2 heterojunction photodetector" @default.
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• W4283822011 doi "https://doi.org/10.1016/j.jallcom.2022.166190" @default.
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