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- W4283822275 abstract "• The influence of Si/SiO2 and glass substrates in multilayered GMI sensors was investigated. • The multilayered sensing element deposited over Si/SiO2 was found to couple to the substrate. • The GMI effect was found to be significantly larger for the sensing element deposited over glass. • Both sensing elements can be integrated to silicon-based technologies. • The magnetic sensing element deposited over Si/SiO2 may also be used as a low-pass filter. The room-temperature longitudinal and in-plane transversal giant magneto-impedance (GMI) effects were investigated in multilayered stripes with composition [Py(100 nm)/Ti(6 nm)]4/Cu(400 nm)/[Py(100 nm)/Ti(6 nm)] 4 deposited over Si/SiO 2 and over glass substrates for applied magnetic fields ( H ) varying in the range ± 0.4 T and for a broad frequency ( f) range of 0.3–12 MHz. The sensing element was found to couple to the Si/SiO 2 substrate influencing largely the magneto-impedance ( Z ) data. For the sensing element deposited over Si/SiO 2 (glass) substrate, the maximum variation in the magnetic impedance, Δ Z = Z ( H ) – Z ( H = 0.4 T), was found to be about 18 mΩ (550 mΩ). Moreover, the corresponding maximum sensitivity ( S ) for the sample deposited over Si/SiO 2 (glass) was 36 Ω/T (2500 Ω/T). The significant differences in Δ Z and in S were associated to the leakage of the ac electric current through a capacitive coupling between the Si/SiO 2 substrate and the sensing element that increases for increasing frequency." @default.
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- W4283822275 date "2022-10-01" @default.
- W4283822275 modified "2023-10-17" @default.
- W4283822275 title "Investigation of the GMI effect in multilayered sensing elements deposited over silicon and glass substrates" @default.
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- W4283822275 doi "https://doi.org/10.1016/j.jmmm.2022.169678" @default.
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