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- W4284708950 abstract "In this study, high-performance normally–off oxidized Si-terminated (C–Si) diamond metal–oxide– semiconductor field–effect transistors (MOSFETs) have been achieved using (111) diamond and Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>++</sup> )-diamond MOSFETs utilizing a SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> mask, carbon–silicon bonding was established at SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /diamond interface. C–Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications." @default.
- W4284708950 created "2022-07-08" @default.
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- W4284708950 date "2022-05-22" @default.
- W4284708950 modified "2023-09-24" @default.
- W4284708950 title "300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al<sub>2</sub>O<sub>3</sub> Gate Insulator" @default.
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- W4284708950 doi "https://doi.org/10.1109/ispsd49238.2022.9813655" @default.
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