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- W4284879535 abstract "Summary form only. The reliability of Silicon Gated Field Emitter arrays (Si- GFEAs) [1] should be studied before practical realization. The failure of these arrays may be due to tip current runaway, possibly from ionization of gas molecules [2] or could be emitter to gate surface breakdown along the dielectric, where a conducting leakage path is formed between emitter and gate. Initial experiments were carried out using an arc detection circuit [3] for emitter array sizes of 25x25, 32x32, and 50x50. A constant DC voltage of 50V was applied to the gate, whereas the collector was kept at 200V.The distance between emitter to collector is 1mm. The approximate time for an arc initiation was around 10-20 minutes as monitored on the oscilloscope. To examine the devices with only 1 arc occurring, a circuit has been designed where once an arc is detected the path to the gate will be disconnected to stop further occurrence of arcs. Scanning Electron Microscope (SEM) images were taken before and after the experiment to observe the severity of the arcs. However, we are yet to perform the experiments to study the effects of ultraviolet light (UV) stimulated water desorption [4] to see if it affects surface breakdown. It is hypothesized that if surface leakage leads to surface breakdown, the removal of water from the dielectric surface should reduce arcing." @default.
- W4284879535 created "2022-07-09" @default.
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- W4284879535 date "2022-05-22" @default.
- W4284879535 modified "2023-09-29" @default.
- W4284879535 title "Silicon Gated Field Emitter Failure Studies" @default.
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- W4284879535 doi "https://doi.org/10.1109/icops45751.2022.9813127" @default.
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