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- W4284880779 abstract "To understand the peculiar kinetic of the negative Bias Temperature Instabilities (nBTI) in GaN-on-Si MOS-channel HEMTs (MOSc-HEMTs), temperature (T), gate bias (V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G,stress</inf> ) and modification of the epitaxial structure are used to determine if free holes are responsible for long-term threshold voltage (Vth) shift. Furthermore, UV assisted nBTI measurements were carried out to stimulate free holes generation in the epitaxy structure near the gate. TCAD simulations validate the assumption that nBTI is a multifactorial degradation mixing free holes capture in the Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> gate oxide and C <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>N</inf> deep acceptor charge state modification in the buried GaN:C layer." @default.
- W4284880779 created "2022-07-09" @default.
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- W4284880779 date "2022-05-22" @default.
- W4284880779 modified "2023-10-18" @default.
- W4284880779 title "Role of free holes in nBTI degradation in GaN-on-Si MOS-channel HEMTs" @default.
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- W4284880779 doi "https://doi.org/10.1109/ispsd49238.2022.9813613" @default.
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