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- W4284897415 abstract "A collector-gate controlled lateral IGBT (CG-LIGBT) with an additional gate called a collector gate (CG) was developed for reducing both the on-state voltage drop (V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</inf> ) and turn-off energy loss (E <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</inf> ) compared to the conventional LIGBT. Carrier density in the CG-LIGBT can be dynamically regulated by controlling the N-MOSFET, which is newly added in the collector region, with the CG. The enhanced hole injection due to an additional P-body region in the collector enables a 26% reduction of the V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</inf> compared to the conventional LIGBT. In addition, the E <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</inf> is reduced by 63% with CG control compared to without CG control because the carrier density is decreased by turning on the CG just before turning off the CG-LIGBT. The device can also be fabricated without any additional process compared to the conventional LIGBT." @default.
- W4284897415 created "2022-07-09" @default.
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- W4284897415 date "2022-05-22" @default.
- W4284897415 modified "2023-09-25" @default.
- W4284897415 title "Collector-gate-controlled lateral IGBT for reduction of on-state voltage and turn-off loss" @default.
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- W4284897415 doi "https://doi.org/10.1109/ispsd49238.2022.9813606" @default.
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