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- W4285019618 abstract "The impact of dislocation density on off-state leakage current in avalanche-capable gallium nitride (GaN)-on-GaN vertical p-n diodes is experimentally demonstrated and studied. At first, the presence of avalanche breakdown was confirmed on p-n diodes grown on bulk GaN substrates with dislocation density ranging from 1e4 to 1e6 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> . The impact of dislocation density on off-state leakage current was then compared and analyzed on devices with confirmed stable avalanche behavior. The devices in the 1e6-cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> region show higher leakage current and a more variable-range-hopping-dominated leakage process, while the Poole–Frenkel effect starts showing more influence on the devices in the 1e4-cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> region, especially under medium and high average electric field beyond 1.0 MV <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$cdot $ </tex-math></inline-formula> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−1</sup> ." @default.
- W4285019618 created "2022-07-12" @default.
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- W4285019618 date "2022-08-01" @default.
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- W4285019618 title "A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes" @default.
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- W4285019618 doi "https://doi.org/10.1109/ted.2022.3186271" @default.
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